IDT71V546S133PF8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 100-pin plastic quad flat pack (PQFP)
• Essence: Provides high-performance data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (512K x 8)
• Access Time: 8.0 ns
• Operating Voltage: 3.3V ± 0.3V
• Operating Temperature: -40°C to +85°C
• Data Retention: 10 years
• Organization: 512K words x 8 bits
• Interface: Parallel
• Clock Frequency: 133 MHz
• Power Supply Current: 80 mA (typical)

Pin Configuration

The IDT71V546S133PF8 has a total of 100 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. A16
28. A17
29. A18
30. A19
31. A20
32. A21
33. A22
34. A23
35. A24
36. A25
37. A26
38. A27
39. A28
40. A29
41. A30
42. A31
43. GND
44. CE2#
45. CE1#
46. WE#
47. OE#
48. UB#
49. LB#
50. VCCQ

(Continued...)

Functional Features

• High-speed operation: The IDT71V546S133PF8 offers fast access times, making it suitable for applications that require quick data retrieval.
• Low-power consumption: Designed to minimize power consumption, making it energy-efficient and suitable for battery-powered devices.
• Synchronous interface: The memory operates synchronously with an external clock signal, ensuring reliable data transfer.
• Easy integration: The parallel interface simplifies the integration of the memory into various electronic systems.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous interface ensures reliable data transfer. - Easy integration into electronic systems.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to some alternative memory options.

Working Principles

The IDT71V546S133PF8 is a synchronous SRAM that stores and retrieves data using a combination of transistors and capacitors. It operates by storing binary information in a matrix of memory cells, which can be accessed and manipulated through the address and data lines. The memory operates synchronously with an external clock signal, allowing for precise timing and reliable data transfer.

Application Field Plans

The IDT71V546S133PF8 is commonly used in various electronic devices that require high-speed data storage and retrieval capabilities. Some application fields include:

1. Networking equipment: Used in routers, switches, and network interface cards to store routing tables and buffer data.
2. Telecommunications systems: Utilized in base stations, voice/data switches, and communication modules for fast data processing.
3. Industrial automation: Integrated into control systems, PLCs, and robotics for storing program code and intermediate data.
4. Medical devices: Employed in medical imaging equipment, patient monitoring systems, and diagnostic instruments for quick data access.
5. Automotive electronics: Used in advanced driver assistance systems (ADAS), infotainment systems, and engine control units (ECUs) for efficient data handling.

Alternative Models

• IDT71V65603: 8 Megabit (1M x 8) synchronous SRAM with a clock frequency of 166 MHz.
• Cypress CY7C1049G: 4 Megabit (512K x 8) synchronous SRAM with an access time of 10 ns