IDT71V546S133PF

Product Overview

Category

The IDT71V546S133PF belongs to the category of semiconductor memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable data retention
• Easy integration into various electronic systems

Package

The IDT71V546S133PF is available in a compact and standardized package, suitable for surface mount technology (SMT) applications.

Essence

The essence of the IDT71V546S133PF lies in its ability to provide fast and reliable data storage and retrieval capabilities, making it an essential component in modern electronic devices.

Packaging/Quantity

The IDT71V546S133PF is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Meg x 16 bits
• Operating Voltage: 3.3V
• Access Time: 133 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-pin Thin Small Outline Package (TSOP)

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground reference
3. A0-A20 - Address inputs
4. DQ0-DQ15 - Data input/output lines
5. WE - Write enable
6. OE - Output enable
7. CE1, CE2 - Chip enable inputs
8. UB/LB - Byte control inputs
9. CLK - Clock input
10. NC - No connection (reserved pin)

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed access and data transfer
• Non-volatile storage
• Low power consumption
• Easy interfacing with other electronic components
• Multiple chip enable inputs for flexible memory organization

Advantages and Disadvantages

Advantages

• Fast access time allows for efficient data processing
• Large storage capacity accommodates complex applications
• Low power consumption prolongs battery life in portable devices
• Reliable data retention ensures data integrity
• Easy integration into various electronic systems simplifies design and manufacturing processes

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity
• Susceptible to electromagnetic interference (EMI) due to its high-speed operation

Working Principles

The IDT71V546S133PF operates based on the principles of static random access memory (SRAM). It utilizes a combination of flip-flops and logic gates to store and retrieve digital information. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

The IDT71V546S133PF finds extensive use in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

1. IDT71V65602S133BGI - 8 Meg x 16 bits SRAM, 133 nanoseconds access time, BGA package
2. IDT71V124SA15PHG - 1 Meg x 4 bits SRAM, 15 nanoseconds access time, PGA package
3. IDT71V3557S85BG - 256K x 16 bits SRAM, 85 nanoseconds access time, BGA package

(Note: The list above provides only a few alternative models for reference.)

In conclusion, the IDT71V546S133PF is a high-performance SRAM device that offers fast access time, large storage capacity, and low power consumption. Its versatile applications make it an essential component in various electronic systems. While it has certain limitations, its advantages outweigh the disadvantages, making it a reliable choice for memory-intensive applications.

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