IDT71V424YS15PHI

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed synchronous static random-access memory (SRAM) - Low power consumption - 4 Megabit (512K x 8) organization - 3.3V power supply - 15ns access time - Industrial temperature range (-40°C to +85°C) - 44-pin Thin Small Outline Package (TSOP)

Package: TSOP-44

Essence: The IDT71V424YS15PHI is a high-performance SRAM designed for various applications that require fast and reliable memory access.

Packaging/Quantity: The IDT71V424YS15PHI is available in a TSOP-44 package. The quantity per package may vary depending on the supplier.

Specifications

• Organization: 512K x 8 bits
• Supply Voltage: 3.3V ± 0.3V
• Access Time: 15ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10mA (max)
• Operating Current: 100mA (max)
• Data Retention Voltage: 2.0V (min)
• Package Dimensions: 12.8mm x 20.4mm x 1.2mm

Detailed Pin Configuration

The IDT71V424YS15PHI has a total of 44 pins. Here is the detailed pin configuration:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. UB/LB: Upper Byte/Lower Byte Control
7. VCC: Power Supply
8. GND: Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed operation: The IDT71V424YS15PHI offers a fast access time of 15ns, making it suitable for applications that require quick data retrieval.
• Low power consumption: This SRAM is designed to minimize power consumption, making it ideal for battery-powered devices or energy-efficient systems.
• Industrial temperature range: With an operating temperature range of -40°C to +85°C, the IDT71V424YS15PHI can withstand harsh environmental conditions.
• Reliable data retention: The data retention voltage of 2.0V ensures that stored information remains intact even during power fluctuations or interruptions.

Advantages and Disadvantages

Advantages: - High-speed operation allows for efficient data processing. - Low power consumption prolongs battery life in portable devices. - Wide operating temperature range enables usage in various environments. - Reliable data retention ensures data integrity.

Disadvantages: - Limited storage capacity (4 Megabit) compared to higher-capacity memory devices. - Higher cost per bit compared to larger memory modules.

Working Principles

The IDT71V424YS15PHI operates as a synchronous SRAM, which means it synchronizes its internal operations with an external clock signal. When a read or write operation is initiated, the address inputs specify the memory location to access. The data inputs/outputs transfer information between the device and the external system.

During a read operation, the selected memory cell's contents are outputted on the data lines. In a write operation, new data is written into the specified memory location. The control signals (WE, OE, CE1, CE2, UB/LB) manage the timing and enable/disable functions of the device.

Detailed Application Field Plans

The IDT71V424YS15PHI can be used in various applications, including but not limited to: - Embedded systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Its high-speed operation and reliable data retention make it suitable for applications that require fast and secure memory access.

Detailed and Complete Alternative Models

Here are some alternative models that offer similar functionality to the IDT71V424YS15PHI:

1. Cypress CY7C1049G30: 4 Megabit (512K x 8) SRAM, 30ns access time, TSOP-44 package.
2. Micron MT45W4MW16BFB-708 WT:B: 4 Megabit (512K x 8) SRAM, 70ns access time, TSOP-44 package.
3. Samsung K6R4016V1D-UI10: 4 Megabit (512K x 8) SRAM, 100ns access time, TSOP-44 package.

These alternative models provide options with varying access times and may have different features or specifications to suit