IDT71V424YS15PH

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 4 Meg x 4
• Voltage Range: 3.0V - 3.6V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10 µA (typical)
• Package Dimensions: 12.8mm x 20.4mm x 1.2mm

Detailed Pin Configuration

The IDT71V424YS15PH has a total of 44 pins. The pin configuration is as follows:

1. A0-A19: Address Inputs
2. DQ0-DQ3: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. VCC: Power Supply
7. GND: Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed operation: The IDT71V424YS15PH offers a fast access time of 15 ns, allowing for quick data retrieval.
• Low-power consumption: With a standby current of only 10 µA, this SRAM minimizes power usage when not actively accessed.
• Synchronous operation: The device synchronizes its internal operations with an external clock signal, ensuring reliable data transfer.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous operation ensures reliable data transfer.

Disadvantages: - Limited storage capacity (4 Meg x 4). - Higher cost compared to other memory technologies.

Working Principles

The IDT71V424YS15PH is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address inputs, which specify the location of the data to be accessed. The device then reads or writes data from/to the specified memory location based on control signals such as write enable (WE#), output enable (OE#), and chip enable (CE#). The synchronous operation ensures that data transfers occur precisely with the external clock signal, maintaining data integrity.

Detailed Application Field Plans

The IDT71V424YS15PH is commonly used in various applications, including:

1. Computer Systems: Used as cache memory for high-speed data storage and retrieval in CPUs.
2. Networking Equipment: Provides fast data buffering capabilities in routers, switches, and network cards.
3. Telecommunications: Used in base stations, modems, and communication systems for storing critical data.
4. Industrial Control Systems: Enables quick access to control parameters and data storage in automation systems.
5. Consumer Electronics: Utilized in gaming consoles, set-top boxes, and digital cameras for efficient data handling.

Detailed and Complete Alternative Models

1. IDT71V416S: 4 Meg x 16 synchronous SRAM
2. IDT71V424L: 4 Meg x 4 low-power synchronous SRAM
3. IDT71V432S: 4 Meg x 32 synchronous SRAM
4. IDT71V432S: 4 Meg x 32 synchronous SRAM

(Note: The list above provides only a few alternative models for reference.)

This concludes the encyclopedia entry for the IDT71V424YS15PH, a high-speed synchronous SRAM used in various applications.