IDT71V424YS12PHI8

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed synchronous static random-access memory (SRAM) - Low power consumption - 4 Megabit (512K x 8) organization - 3.3V power supply - Industrial temperature range (-40°C to +85°C) - 12ns access time

Package: Plastic SOJ (Small Outline J-lead)

Essence: The IDT71V424YS12PHI8 is a high-performance SRAM designed for various applications that require fast and reliable memory access.

Packaging/Quantity: The IDT71V424YS12PHI8 is available in a plastic SOJ package. The quantity per package may vary depending on the supplier.

Specifications

• Organization: 512K x 8 bits
• Supply Voltage: 3.3V ± 0.3V
• Access Time: 12ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10mA (max)
• Package Dimensions: 28-pin SOJ

Detailed Pin Configuration

The IDT71V424YS12PHI8 has a total of 28 pins. Here is the pin configuration:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. UB/LB: Upper Byte/Lower Byte Control
7. VCC: Power Supply
8. GND: Ground

Note: The remaining pins are not listed here for brevity.

Functional Features

• High-speed operation allows for quick data access.
• Low power consumption makes it suitable for battery-powered devices.
• Industrial temperature range ensures reliable performance in harsh environments.
• 512K x 8 organization provides ample memory capacity.
• Synchronous design simplifies interfacing with other components.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life. - Wide operating temperature range enables usage in various environments. - Ample memory capacity for storing data. - Easy integration with other components due to synchronous design.

Disadvantages: - Limited storage capacity compared to higher-density memory devices. - Higher cost per bit compared to some alternative memory technologies.

Working Principles

The IDT71V424YS12PHI8 is a synchronous SRAM, which means that it operates based on an external clock signal. When the chip enable (CE) and output enable (OE) signals are active, the device can read or write data from/to the specified memory location. The address inputs (A0-A18) determine the memory location being accessed, while the data inputs/outputs (DQ0-DQ7) handle the actual data transfer.

Detailed Application Field Plans

The IDT71V424YS12PHI8 can be used in various applications, including but not limited to: 1. Embedded systems 2. Networking equipment 3. Telecommunications devices 4. Industrial control systems 5. Automotive electronics

In embedded systems, this SRAM can be utilized as a cache memory to improve overall system performance. In networking equipment and telecommunications devices, it can serve as a buffer memory for efficient data handling. Industrial control systems and automotive electronics often require fast and reliable memory access, making the IDT71V424YS12PHI8 a suitable choice.

Detailed and Complete Alternative Models

While the IDT71V424YS12PHI8 offers specific features and specifications, there are alternative models available in the market that cater to different requirements. Some notable alternatives include:

1. Micron MT48LC4M32B2P-6A: 4 Megabit synchronous SRAM with a 6ns access time.
2. Cypress CY7C1049DV33-10ZSXI: 4 Megabit synchronous SRAM with a 10ns access time and a 3.3V power supply.
3. Samsung K6R4016V1D-TC10: 4 Megabit synchronous SRAM with a 10ns access time and a 2.7V-3.6V power supply.

These alternative models offer different access times, power supply voltages, and package options, allowing users to choose the most suitable option for their specific application requirements.

In conclusion, the IDT71V424YS12PHI8 is a high-speed synchronous SRAM that provides reliable memory access for various applications. Its low power consumption, ample memory capacity, and wide operating temperature range make it a versatile choice. However, users should consider alternative models based on their