IDT71V424YS12PHI

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed synchronous static random-access memory (SRAM) - Low power consumption - 4 Megabit (512K x 8) organization - 3.3V power supply - 12ns access time - Industrial temperature range (-40°C to +85°C) - 44-pin Thin Small Outline Package (TSOP)

Package and Quantity: TSOP-44 package, quantity per reel: 250

Essence: The IDT71V424YS12PHI is a high-performance SRAM designed for various applications that require fast and reliable memory access.

Specifications

• Organization: 512K x 8 bits
• Supply Voltage: 3.3V ± 0.3V
• Access Time: 12ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP-44
• Pin Count: 44
• Data Retention Voltage: 2.0V (min)
• Standby Current: 10μA (typ)
• Active Current: 100mA (max)

Detailed Pin Configuration

The IDT71V424YS12PHI has a total of 44 pins. Here is the detailed pin configuration:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. UB#, LB#: Upper Byte and Lower Byte Enables
7. VCC: Power Supply (+3.3V)
8. GND: Ground (0V)

Functional Features

• High-speed operation: The IDT71V424YS12PHI offers a fast access time of 12ns, making it suitable for applications that require quick data retrieval.
• Low power consumption: With a standby current of only 10μA and an active current of 100mA (maximum), this SRAM helps conserve energy in portable devices.
• Industrial temperature range: The device can operate reliably in a wide temperature range from -40°C to +85°C, making it suitable for industrial applications.

Advantages and Disadvantages

Advantages: - High-speed operation allows for efficient data access. - Low power consumption helps extend battery life in portable devices. - Wide operating temperature range enables usage in various environments.

Disadvantages: - Limited storage capacity (4 Megabit) compared to higher-capacity memory devices. - Higher cost per bit compared to larger memory modules.

Working Principles

The IDT71V424YS12PHI is based on synchronous SRAM technology. It utilizes a clock signal to synchronize the read and write operations, ensuring reliable data transfer. When the chip enable (CE#) and output enable (OE#) signals are activated, the addressed data is available on the data outputs (DQ0-DQ7). The write enable (WE#) signal controls the writing of data into the memory.

Detailed Application Field Plans

The IDT71V424YS12PHI is commonly used in the following applications:

1. Embedded Systems: The high-speed operation and low power consumption make it suitable for use in microcontrollers, digital signal processors, and other embedded systems.
2. Networking Equipment: The SRAM's fast access time is beneficial for buffering and caching data in routers, switches, and network interface cards.
3. Industrial Control Systems: The wide operating temperature range allows for reliable operation in harsh industrial environments, making it ideal for control systems and automation equipment.
4. Telecommunications: The SRAM can be used in telecommunications equipment for storing temporary data during call processing and signal routing.

Detailed and Complete Alternative Models

1. IDT71V424S: Similar to IDT71V424YS12PHI, but operates at a faster access time of 10ns.
2. IDT71V416: Lower-capacity version with 2 Megabit (256K x 8) organization.
3. IDT71V432: Higher-capacity version with 8 Megabit (1M x 8) organization.
4. IDT71V464: Double the capacity of IDT71V424YS12PHI, with 8 Megabit (1M x 8) organization.

These alternative models offer different capacities and access times to suit various application requirements.

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