IDT71V424YS12PH8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides high-performance data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (Mbit)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Clock Frequency: 83 MHz
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Pin Configuration

The IDT71V424YS12PH8 has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. A16
28. A17
29. A18
30. A19
31. A20
32. A21
33. A22
34. A23
35. A24
36. A25
37. A26
38. A27
39. A28
40. A29
41. A30
42. A31
43. GND
44. VCC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and efficient data transfer.
• Provides non-volatile storage, retaining data even when power is disconnected.
• Supports burst mode operation for faster data transfer.

Advantages and Disadvantages

Advantages: - High-speed performance enables rapid data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous design ensures reliable data transfer. - Non-volatile storage preserves data integrity. - Burst mode operation enhances overall system efficiency.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per unit compared to alternative memory options. - Requires careful handling and proper ESD protection during installation.

Working Principles

The IDT71V424YS12PH8 operates based on the principles of synchronous static random-access memory (SRAM). It stores and retrieves data using a parallel interface, allowing for fast and efficient data transfer. The device relies on an external clock signal to synchronize its operations with the rest of the system. When data is read from or written to the memory, the address lines specify the location within the memory array.

Detailed Application Field Plans

The IDT71V424YS12PH8 is commonly used in various applications that require high-speed and low-power memory solutions. Some of the potential application fields include:

1. Embedded Systems: Used in microcontrollers, digital signal processors, and other embedded systems where fast and reliable data storage is essential.
2. Networking Equipment: Employed in routers, switches, and network interface cards to store routing tables, buffers, and other critical data.
3. Telecommunications: Utilized in base stations, voice/data switches, and communication infrastructure for efficient data handling and storage.
4. Industrial Automation: Integrated into programmable logic controllers (PLCs), robotics, and automation systems to store program code and process data.
5. Consumer Electronics: Found in gaming consoles, set-top boxes, and multimedia devices to provide high-speed memory for data storage and processing.

Detailed and Complete Alternative Models

1. IDT71V424S: Similar to IDT71V424YS12PH8 but operates at a different access time of 10 ns.
2. IDT71V416: Lower-density variant with 2 Megabits capacity and similar characteristics.
3. IDT71V432: Higher-density variant with 8 Megabits capacity and similar characteristics.
4. IDT71V464: Double the density of IDT71V424YS12PH8, offering 8 Megabits capacity.

These alternative models provide options with