IDT71V424YS12PH

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
• Package: 44-pin thin small outline package (TSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (Mbit)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 12 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Interface: Parallel

Pin Configuration

The IDT71V424YS12PH has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. A16
28. A17
29. A18
30. A19
31. A20
32. A21
33. A22
34. A23
35. A24
36. A25
37. A26
38. A27
39. A28
40. A29
41. A30
42. A31
43. GND
44. VCCQ

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and efficient data transfer.
• Provides non-volatile storage, retaining data even when power is lost.
• Supports a wide operating temperature range, making it suitable for various environments.

Advantages and Disadvantages

Advantages: - Fast access time enables high-performance applications. - Low-power consumption extends battery life in portable devices. - Reliable data retention ensures data integrity. - Wide operating temperature range allows for versatile usage.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to some alternative memory options. - Requires careful handling and proper ESD precautions during installation.

Working Principles

The IDT71V424YS12PH operates based on the principles of synchronous SRAM. It uses a clock signal to synchronize data transfers between the memory device and the host system. When a read or write operation is initiated, the address lines specify the location in memory, and the data lines transmit the information. The device's internal circuitry ensures accurate and reliable data storage and retrieval.

Detailed Application Field Plans

The IDT71V424YS12PH is commonly used in various electronic systems that require fast and reliable data storage. Some application fields include:

1. Computer Systems: Used as cache memory or main memory in computer systems to enhance performance.
2. Networking Equipment: Utilized in routers, switches, and network cards for buffering and storing data packets.
3. Telecommunications: Used in base stations, switches, and other telecom equipment for storing call data and signaling information.
4. Industrial Control Systems: Employed in automation systems, robotics, and control units for storing critical data and program code.

Detailed and Complete Alternative Models

1. IDT71V424S: Similar to IDT71V424YS12PH but operates at a different access time of 10ns.
2. IDT71V416: Lower density version with 2 Megabits (Mbit) capacity.
3. IDT71V432: Higher density version with 8 Megabits (Mbit) capacity.
4. IDT71V424L: Low-power variant with reduced power consumption.

These alternative models offer different specifications and features to cater to specific application requirements.

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