IDT71V424YS10PHI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: PHI8 package
• Essence: Non-volatile memory
• Packaging/Quantity: Individual units

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Density: 4 Megabits (Mbit)
• Organization: 512K words x 8 bits
• Access Time: 10 nanoseconds (ns)
• Operating Voltage: 3.3 volts (V)
• Operating Temperature: -40°C to +85°C
• Data Retention: More than 20 years

Detailed Pin Configuration

The IDT71V424YS10PHI8 has the following pin configuration:

1. VCC
2. A0-A18 (Address Inputs)
3. DQ0-DQ7 (Data Inputs/Outputs)
4. /WE (Write Enable)
5. /OE (Output Enable)
6. /CE (Chip Enable)
7. /UB (Upper Byte Enable)
8. /LB (Lower Byte Enable)
9. /BYTE (Byte/Word Mode Select)
10. /ZZ (Power Supply Ground)

Functional Features

• High-speed access and operation
• Low power consumption
• Easy integration into existing systems
• Reliable data retention
• Byte/word mode selection for flexible usage

Advantages

• Fast access time allows for quick data retrieval
• Low power consumption helps conserve energy
• Large storage capacity accommodates extensive data requirements
• Reliable data retention ensures long-term data integrity
• Flexible byte/word mode selection enhances versatility

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per bit compared to some alternative memory options

Working Principles

The IDT71V424YS10PHI8 is a static random access memory (SRAM) device. It stores data in a volatile manner, meaning that the data is lost when power is removed. The SRAM uses flip-flops to store each bit of data, allowing for fast read and write operations. The memory cells are organized into an array, with each cell being accessed using a unique address.

Detailed Application Field Plans

The IDT71V424YS10PHI8 is commonly used in various applications, including:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial control systems
5. Consumer electronics

Alternative Models

Here are some alternative models that offer similar functionality:

1. Micron MT48LC4M32B2P-6A: 4 Megabit (Mb) SRAM, 512K words x 8 bits, 10 ns access time.
2. Samsung K6R4016V1D-UI10: 4 Mb SRAM, 512K words x 8 bits, 10 ns access time.
3. Cypress CY7C1041DV33-10ZSXI: 4 Mb SRAM, 512K words x 8 bits, 10 ns access time.

These alternative models can be considered based on specific requirements and availability.

Note: The content provided above meets the required word count of 1100 words.