IDT71V424YS10PHI

Product Overview

Category

IDT71V424YS10PHI belongs to the category of Static Random Access Memory (SRAM).

Use

It is primarily used as a high-speed, low-power memory device for various electronic applications.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Reliable performance

Package

IDT71V424YS10PHI is available in a compact and durable package, suitable for easy integration into electronic circuits.

Essence

The essence of IDT71V424YS10PHI lies in its ability to provide fast and efficient data storage and retrieval.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of IDT71V424YS10PHI chips.

Specifications

• Memory Size: 4 Megabits (512K x 8)
• Access Time: 10 nanoseconds
• Operating Voltage: 3.3V
• Standby Current: 10 microamps (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground reference
3. A0-A18 - Address inputs
4. DQ0-DQ7 - Data inputs/outputs
5. CE - Chip enable
6. OE - Output enable
7. WE - Write enable
8. UB/LB - Upper byte/lower byte control
9. NC - No connection (reserved pin)

Functional Features

• High-speed access and data transfer
• Low power consumption during standby mode
• Easy integration into existing circuit designs
• Reliable performance under varying operating conditions
• Compatibility with standard memory interfaces

Advantages

• Fast data access time enhances overall system performance
• Low power consumption prolongs battery life in portable devices
• Compact package allows for space-efficient circuit design
• Reliable operation ensures data integrity and system stability

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to alternative memory options
• Sensitivity to electrostatic discharge (ESD) requires proper handling during installation

Working Principles

IDT71V424YS10PHI operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The memory cells within the device are organized into an array, with each cell capable of storing one bit of data. Accessing and manipulating data within the memory is achieved through the control signals provided by the pin configuration.

Detailed Application Field Plans

IDT71V424YS10PHI finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Consumer electronics - Industrial automation

Detailed and Complete Alternative Models

1. IDT71V016S - 2 Megabit SRAM
2. IDT71V256 - 32 Kilobit SRAM
3. IDT71V67602 - 8 Megabit SRAM
4. IDT71V3557 - 16 Megabit SRAM
5. IDT71V124 - 1 Megabit SRAM

These alternative models offer different memory sizes and specifications to cater to diverse application requirements.

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