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IDT71V424YS10PH8

IDT71V424YS10PH8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 44-pin TSOP (Thin Small Outline Package)
  • Essence: Provides high-performance data storage and retrieval capabilities for various electronic devices
  • Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 4 Megabits (Mbit)
  • Organization: 512K words x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 nanoseconds (ns)
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 10 years

Pin Configuration

The IDT71V424YS10PH8 has a total of 44 pins. The pin configuration is as follows:

  1. VCCQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. A0
  12. A1
  13. A2
  14. A3
  15. A4
  16. A5
  17. A6
  18. A7
  19. A8
  20. A9
  21. A10
  22. A11
  23. A12
  24. A13
  25. A14
  26. A15
  27. A16
  28. A17
  29. A18
  30. A19
  31. A20
  32. A21
  33. A22
  34. A23
  35. A24
  36. A25
  37. A26
  38. A27
  39. A28
  40. A29
  41. WE#
  42. OE#
  43. CE#
  44. VCC

Functional Features

  • High-speed operation allows for fast data access and retrieval.
  • Low-power consumption makes it suitable for battery-powered devices.
  • Synchronous interface ensures reliable and efficient communication with the device.
  • Easy integration into various electronic systems due to its compact package size.

Advantages and Disadvantages

Advantages: - High-speed performance enables quick data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous interface ensures reliable data transfer. - Compact package size allows for easy integration into different electronic systems.

Disadvantages: - Limited storage capacity compared to other memory devices. - Higher cost per unit compared to some alternative models. - Requires proper handling and static discharge precautions during installation.

Working Principles

The IDT71V424YS10PH8 operates as a synchronous SRAM, utilizing a clock signal to synchronize data transfers. When the chip is enabled (CE#), the output enable (OE#) and write enable (WE#) signals control the read and write operations. The address lines (A0-A29) specify the location of the data to be accessed, while the data lines (DQ0-DQ7) transmit the actual data.

Detailed Application Field Plans

The IDT71V424YS10PH8 is commonly used in various applications that require high-speed and low-power memory, such as:

  1. Computer systems
  2. Networking equipment
  3. Telecommunications devices
  4. Industrial automation systems
  5. Consumer electronics
  6. Medical devices

Alternative Models

Below are some alternative models that offer similar functionality:

  1. Micron MT48LC4M32B2P-6A: 4 Megabit Synchronous SRAM, 10ns access time.
  2. Samsung K6R4016V1D-UI10: 4 Megabit Synchronous SRAM, 10ns access time.
  3. Cypress CY7C1041CV33-10ZSXI: 4 Megabit Synchronous SRAM, 10ns access time.

These alternative models can be considered based on specific requirements and availability.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V424YS10PH8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V424YS10PH8 in technical solutions:

  1. Question: What is the IDT71V424YS10PH8?
    Answer: The IDT71V424YS10PH8 is a high-speed, low-power CMOS static RAM (SRAM) with a capacity of 4 Megabits (Mbits).

  2. Question: What is the operating voltage range for the IDT71V424YS10PH8?
    Answer: The IDT71V424YS10PH8 operates within a voltage range of 3.0V to 3.6V.

  3. Question: What is the access time of the IDT71V424YS10PH8?
    Answer: The IDT71V424YS10PH8 has an access time of 10 nanoseconds (ns).

  4. Question: Can the IDT71V424YS10PH8 be used in battery-powered devices?
    Answer: Yes, the IDT71V424YS10PH8 is designed to operate at low power, making it suitable for battery-powered devices.

  5. Question: What is the package type for the IDT71V424YS10PH8?
    Answer: The IDT71V424YS10PH8 comes in a 44-pin Plastic Thin Small Outline Package (TSOP).

  6. Question: Is the IDT71V424YS10PH8 compatible with other SRAMs?
    Answer: Yes, the IDT71V424YS10PH8 is pin-compatible with other 4Mbit SRAMs, allowing for easy replacement or upgrade in existing designs.

  7. Question: What are the typical applications of the IDT71V424YS10PH8?
    Answer: The IDT71V424YS10PH8 is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance applications.

  8. Question: Does the IDT71V424YS10PH8 support multiple read and write operations simultaneously?
    Answer: Yes, the IDT71V424YS10PH8 supports simultaneous read and write operations, allowing for efficient data access.

  9. Question: What is the standby current consumption of the IDT71V424YS10PH8?
    Answer: The IDT71V424YS10PH8 has a low standby current consumption of less than 1 microampere (µA).

  10. Question: Can the IDT71V424YS10PH8 operate at high temperatures?
    Answer: Yes, the IDT71V424YS10PH8 is designed to operate reliably at extended temperature ranges, making it suitable for harsh environments.

Please note that these answers are general and may vary depending on specific application requirements.