IDT71V424YS10PH

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: Plastic SOJ (Small Outline J-lead)
• Essence: Non-volatile memory
• Packaging/Quantity: Tray packaging, quantity varies

Specifications

• Manufacturer: Integrated Device Technology (IDT)
• Model: IDT71V424YS10PH
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit (Mbit)
• Data Bus Width: 8 bits
• Access Time: 10 nanoseconds (ns)
• Operating Voltage: 5 volts (V)
• Temperature Range: Commercial (0°C to 70°C)
• RoHS Compliance: Yes

Pin Configuration

The IDT71V424YS10PH has a total of 32 pins. The pin configuration is as follows:

1. A12
2. A7
3. A6
4. A5
5. A4
6. A3
7. A2
8. A1
9. A0
10. VCC
11. OE#
12. WE#
13. I/O0
14. I/O1
15. I/O2
16. I/O3
17. I/O4
18. I/O5
19. I/O6
20. I/O7
21. GND
22. A8
23. A9
24. A11
25. A10
26. CE#
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• High-speed access: The IDT71V424YS10PH offers fast access times, allowing for quick retrieval and storage of data.
• Low power consumption: This memory device is designed to consume minimal power, making it suitable for battery-powered devices.
• Large storage capacity: With a 4 Mbit capacity, the IDT71V424YS10PH can store a significant amount of data.
• Non-volatile memory: The stored data remains intact even when power is removed, ensuring data persistence.

Advantages

• Fast access times enable efficient data processing.
• Low power consumption prolongs battery life in portable devices.
• Large storage capacity accommodates extensive data requirements.
• Non-volatile memory ensures data integrity during power cycles.

Disadvantages

• Limited compatibility: The IDT71V424YS10PH may not be compatible with all systems due to its specific pin configuration and voltage requirements.
• Relatively high cost: Compared to other memory options, this IC may have a higher price point.

Working Principles

The IDT71V424YS10PH operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain their state as long as power is supplied. The memory cells are organized into rows and columns, allowing for efficient read and write operations.

Application Field Plans

The IDT71V424YS10PH is commonly used in various applications, including:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial control systems
5. Consumer electronics

Its high-speed performance, low power consumption, and large storage capacity make it suitable for these diverse fields.

Alternative Models

If the IDT71V424YS10PH is not available or does not meet specific requirements, alternative models that offer similar functionality include:

1. Cypress CY7C1049G30
2. Micron MT48LC4M32B2
3. Samsung K6R4016V1D

These alternative models can be considered as substitutes for the IDT71V424YS10PH, depending on the specific application and compatibility requirements.

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