IDT71V424YL15PH

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed static random-access memory (SRAM) - Low power consumption - 4 Megabit (Mbit) capacity - 15 nanosecond (ns) access time - Industrial temperature range (-40°C to +85°C)

Package: Plastic SOJ (Small Outline J-lead)

Essence: The IDT71V424YL15PH is a high-performance SRAM designed for use in various electronic devices that require fast and reliable data storage.

Packaging/Quantity: The IDT71V424YL15PH is typically sold in reels, with each reel containing a specified quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Capacity: 4 Mbit
• Access Time: 15 ns
• Operating Voltage: 3.3V
• Standby Current: 10 mA (max)
• Operating Temperature Range: -40°C to +85°C
• Package Type: Plastic SOJ
• Pin Count: 32

Detailed Pin Configuration

The IDT71V424YL15PH features a 32-pin configuration. The pinout diagram and description of each pin are as follows:

| Pin No. | Pin Name | Description | |---------|----------|-------------| | 1 | VCC | Power supply voltage input (+3.3V) | | 2 | A0-A19 | Address inputs | | 3 | CE1 | Chip Enable input | | 4 | CE2 | Chip Enable input | | 5 | WE | Write Enable input | | 6 | OE | Output Enable input | | 7-30 | DQ0-DQ23 | Data inputs/outputs | | 31 | VSS | Ground (0V) | | 32 | NC | No Connection |

Functional Features

• High-speed access: The IDT71V424YL15PH offers a fast access time of 15 ns, allowing for quick retrieval and storage of data.
• Low power consumption: This SRAM is designed to minimize power usage, making it suitable for battery-powered devices or applications where power efficiency is crucial.
• Reliable data retention: The memory cells in the IDT71V424YL15PH are designed to retain data even when power is disconnected, ensuring data integrity.

Advantages and Disadvantages

Advantages: - Fast access time - Low power consumption - Reliable data retention - Suitable for industrial temperature range

Disadvantages: - Limited capacity (4 Mbit) - Higher cost compared to lower-capacity memory options

Working Principles

The IDT71V424YL15PH operates based on static random-access memory (SRAM) technology. It stores data using flip-flops, which can hold information as long as power is supplied. When an address is provided, the corresponding data is read from or written to the memory cells. The chip enable (CE), write enable (WE), and output enable (OE) signals control the reading and writing operations.

Detailed Application Field Plans

The IDT71V424YL15PH can be used in various electronic systems that require high-speed and reliable data storage, such as: - Computer systems - Networking equipment - Communication devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V424S: Similar to IDT71V424YL15PH, but with a different package type (TSOP)
2. IDT71V424L: Similar to IDT71V424YL15PH, but with a lower access time (10 ns)
3. IDT71V424Y: Similar to IDT71V424YL15PH, but with a higher access time (20 ns)

These alternative models offer different package options and access times, allowing users to choose the most suitable option for their specific requirements.

Note: The above information is provided as an example and may not reflect actual product specifications. Please refer to the manufacturer's datasheet for accurate and up-to-date information.