IDT71V424YL10PHI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Thin Small Outline Package (TSOP)
• Essence: Stores and retrieves digital information in electronic systems
• Packaging/Quantity: Available in reels of 250 units

Specifications

• Organization: 4 Meg x 4
• Voltage Range: 3.0V - 3.6V
• Access Time: 10 ns
• Operating Temperature: -40°C to +85°C
• Standby Current: 5 mA (typical)
• Package Dimensions: 10.2mm x 18.4mm

Detailed Pin Configuration

The IDT71V424YL10PHI has a total of 44 pins, which are assigned specific functions. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. WE#
12. OE#
13. A0
14. A1
15. A2
16. A3
17. A4
18. A5
19. A6
20. A7
21. A8
22. A9
23. A10
24. A11
25. A12
26. A13
27. A14
28. A15
29. A16
30. A17
31. A18
32. A19
33. A20
34. A21
35. A22
36. A23
37. A24
38. A25
39. VCC
40. DQ15
41. DQ14
42. DQ13
43. DQ12
44. DQ11

Functional Features

• High-speed operation: The IDT71V424YL10PHI offers a fast access time of 10 ns, making it suitable for applications requiring quick data retrieval.
• Low-power consumption: This memory device is designed to operate at low voltages and consumes minimal power during standby mode.
• Synchronous operation: The SRAM operates synchronously with the system clock, ensuring efficient data transfer and synchronization.

Advantages and Disadvantages

Advantages: - Fast access time enables rapid data retrieval. - Low-power consumption prolongs battery life in portable devices. - Synchronous operation ensures reliable data transfer.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per unit compared to alternative memory options.

Working Principles

The IDT71V424YL10PHI is based on static random-access memory (SRAM) technology. It stores digital information using flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a 4 Meg x 4 configuration, allowing for efficient storage and retrieval of data. The synchronous operation ensures that data is transferred in sync with the system clock, enabling reliable communication between the memory device and the rest of the system.

Detailed Application Field Plans

The IDT71V424YL10PHI is commonly used in various electronic systems that require high-speed and low-power memory solutions. Some potential application fields include:

1. Embedded Systems: The SRAM can be utilized in microcontrollers, digital signal processors, and other embedded systems where fast and reliable data storage is crucial.
2. Networking Equipment: The memory device can be integrated into routers, switches, and network interface cards to facilitate data buffering and caching.
3. Telecommunications: The SRAM can be employed in telecommunications equipment for storing temporary data during call processing or packet switching.
4. Industrial Automation: The memory device finds applications in industrial control systems, robotics, and automation equipment that require high-speed data storage.

Detailed and Complete Alternative Models

1. IDT71V416S: 4 Meg x 16 synchronous SRAM with a similar speed and package configuration.
2. CY7C1041DV33: 4 Meg x 4 synchronous SRAM with a lower access time of 8 ns.
3. AS6C4008-55BIN: 4 Meg x 8 asynchronous SRAM with a different pin configuration but comparable storage capacity.

These alternative models offer similar functionality and can be considered as substitutes for the IDT71V424YL10PHI depending on specific requirements and compatibility with the target system.

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