IDT71V424S12YI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 119-ball BGA (Ball Grid Array)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (Mbit)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Clock Frequency: 83 MHz
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Pin Configuration (Top View)

___________ | | A0 |1 56| VCC A1 |2 55| A18 A2 |3 54| A17 A3 |4 53| A16 A4 |5 52| A15 A5 |6 51| A14 A6 |7 50| A13 A7 |8 49| A12 A8 |9 48| A11 A9 |10 47| A10 A10 |11 46| A19 A11 |12 45| OE# A12 |13 44| WE# A13 |14 43| I/O0 A14 |15 42| I/O1 A15 |16 41| I/O2 A16 |17 40| I/O3 A17 |18 39| I/O4 A18 |19 38| I/O5 DQ |20 37| I/O6 DQ |21 36| I/O7 DQ |22 35| GND DQ |23 34| CE# DQ |24 33| UB# DQ |25 32| LB# DQ |26 31| CLK DQ |27 30| VCC DQ |28 29| VCC |___________|

Functional Features

• High-speed operation allows for quick data access and retrieval
• Low-power consumption makes it suitable for battery-powered devices
• Synchronous design ensures reliable and synchronized data transfers
• Easy integration into existing circuit designs due to its parallel interface
• Wide operating temperature range enables usage in various environments

Advantages

• Fast access time improves overall system performance
• Low power consumption extends battery life in portable devices
• Reliable synchronous operation ensures data integrity
• Versatile packaging options provide flexibility in design and manufacturing

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per bit compared to alternative memory solutions
• Requires additional control signals for proper operation

Working Principles

The IDT71V424S12YI8 is a synchronous SRAM that stores and retrieves data using an address and data bus. It operates synchronously with an external clock signal, ensuring data transfers occur at precise intervals. The device utilizes a parallel interface, allowing for simultaneous transfer of multiple bits of data. When properly controlled, the SRAM enables fast and reliable storage and retrieval of information.

Detailed Application Field Plans

The IDT71V424S12YI8 is commonly used in various applications that require high-speed and low-power memory solutions. Some potential application fields include:

1. Telecommunications: Used in networking equipment, routers, and switches for buffering and caching purposes.
2. Consumer Electronics: Integrated into gaming consoles, set-top boxes, and digital cameras to store temporary data and settings.
3. Automotive Systems: Employed in automotive infotainment systems, navigation units, and advanced driver assistance systems (ADAS) for quick data access.
4. Industrial Automation: Utilized in programmable logic controllers (PLCs), robotics, and control systems for efficient data storage and retrieval.
5. Medical Devices: Incorporated into medical imaging equipment, patient monitoring systems, and diagnostic devices for real-time data processing.

Detailed and Complete Alternative Models

1. IDT71V416: 4Mbit synchronous SRAM with a 16-bit organization.
2. Cypress CY7C1041: 4Mbit synchronous SRAM with a 8-bit organization. 3