IDT71V424S12Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides high-performance data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 4 Megabits (4M x 1)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Clock Frequency: 83 MHz
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V424S12Y8 has a total of 44 pins. The pin configuration is as follows:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. UB#, LB#: Byte Enable Inputs
7. CLK: Clock Input
8. VCC: Power Supply
9. GND: Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and synchronized data transfers.
• Byte enable inputs provide flexibility in accessing individual bytes of data.
• Chip enable input allows for easy control of the memory device.

Advantages and Disadvantages

Advantages

• High-speed operation enables efficient data processing.
• Low-power consumption prolongs battery life in portable devices.
• Synchronous design ensures reliable and synchronized data transfers.
• Byte enable inputs provide flexibility in accessing specific data bytes.
• Compact package size allows for space-saving integration into electronic devices.

Disadvantages

• Limited memory size compared to larger capacity memory devices.
• Higher cost per bit compared to other memory technologies.
• Requires external clock signal for proper operation.

Working Principles

The IDT71V424S12Y8 is a synchronous SRAM that stores and retrieves data using an address and data bus. When the chip enable (CE#) input is active low, the device is enabled, and data can be read from or written to the memory array. The write enable (WE#) input controls the write operation, while the output enable (OE#) input controls the output buffers. The clock input (CLK) synchronizes the internal operations of the memory device.

Detailed Application Field Plans

The IDT71V424S12Y8 is commonly used in various applications, including:

1. Computer systems: Used as cache memory or main memory in desktops, laptops, and servers.
2. Networking equipment: Provides high-speed data storage for routers, switches, and network appliances.
3. Telecommunications devices: Used in base stations, modems, and communication infrastructure.
4. Consumer electronics: Found in digital cameras, printers, set-top boxes, and gaming consoles.
5. Automotive electronics: Used in automotive control units, infotainment systems, and navigation devices.

Detailed and Complete Alternative Models

1. IDT71V424S15Y: Similar to IDT71V424S12Y8 but with a faster access time of 15 ns.
2. IDT71V424S10Y: Similar to IDT71V424S12Y8 but with a slower access time of 10 ns.
3. IDT71V424S20Y: Similar to IDT71V424S12Y8 but with a larger memory size of 8 Megabits.

(Note: The list above includes only a few alternative models for reference.)

This concludes the encyclopedia entry for the IDT71V424S12Y8, providing an overview of its product details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.