IDT71V424S12PHI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in reels of 250 units

Specifications

• Memory Type: Synchronous SRAM
• Memory Size: 4 Megabits (Mbit)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Clock Frequency: 83 MHz
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years

Pin Configuration

The IDT71V424S12PHI8 has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. A16
28. A17
29. A18
30. A19
31. A20
32. A21
33. A22
34. A23
35. A24
36. A25
37. A26
38. A27
39. A28
40. A29
41. A30
42. A31
43. GND
44. VCCQ

Functional Features

• Synchronous operation with an external clock signal
• Low-power consumption
• High-speed data access and retrieval
• Easy interfacing with other digital systems
• Automatic power-down mode for reduced power consumption during idle periods
• Built-in self-refresh capability for data retention during power-off periods

Advantages and Disadvantages

Advantages: - High-speed operation allows for quick data processing - Low-power consumption helps in energy-efficient designs - Synchronous operation simplifies system integration - Self-refresh capability ensures data retention without external intervention

Disadvantages: - Limited memory size (4 Mbit) - Relatively higher cost compared to non-volatile memory options - Vulnerable to data loss in case of power failure or disruption

Working Principles

The IDT71V424S12PHI8 is a synchronous SRAM that operates based on an external clock signal. It stores and retrieves data using a matrix of memory cells organized in a 512K x 8 configuration. The synchronous design ensures that data transfers occur precisely with each clock cycle, enabling high-speed operation. The device also features automatic power-down and self-refresh capabilities to optimize power consumption and ensure data integrity.

Detailed Application Field Plans

The IDT71V424S12PHI8 is commonly used in various applications that require fast and reliable data storage and retrieval. Some potential application fields include:

1. Computer Systems: Used as cache memory in CPUs and graphics cards.
2. Networking Equipment: Provides buffering and temporary storage for data packets.
3. Telecommunications: Utilized in base stations, routers, and switches for data buffering.
4. Industrial Control Systems: Used for storing critical data and program code in automation systems.
5. Medical Devices: Provides temporary storage for patient data and real-time processing.

Alternative Models

1. IDT71V424S15PHI8: Similar to IDT71V424S12PHI8 but with a faster access time of 15 ns.
2. IDT71V416S10PHI: Lower capacity variant with 2 Megabits (Mbit) memory size.
3. IDT71V432S10PHI: Higher capacity variant with 8 Megabits (Mbit) memory size.

These alternative models offer different specifications and may be suitable for specific application requirements.

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