IDT71V424S12PH8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: Plastic SOJ (Small Outline J-lead)
• Essence: Non-volatile memory
• Packaging/Quantity: Tray packaging, 100 pieces per tray

Specifications

• Part Number: IDT71V424S12PH8
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Meg x 4
• Voltage Supply: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 32 pins

Detailed Pin Configuration

The IDT71V424S12PH8 has a total of 32 pins, which are assigned specific functions as follows:

1. VCC - Power supply voltage
2. A0-A21 - Address inputs
3. DQ0-DQ3 - Data inputs/outputs
4. /WE - Write Enable
5. /OE - Output Enable
6. /CE - Chip Enable
7. /LB - Lower Byte Enable
8. /UB - Upper Byte Enable
9. /ZZ - Sleep Mode Control
10. GND - Ground

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures energy efficiency.
• Large storage capacity of 4 Megabytes provides ample space for data storage.
• Non-volatile memory retains stored data even when power is disconnected.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Non-volatile memory ensures data retention without the need for constant power supply.

Disadvantages: - Relatively higher cost compared to other memory technologies. - Limited endurance in terms of write cycles. - Susceptible to data loss in case of power failure or electrical disturbances.

Working Principles

The IDT71V424S12PH8 is a static random access memory (SRAM) device. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a 4 Meg x 4 configuration, allowing for efficient storage and retrieval of data. The device operates at a voltage supply of 3.3V and has an access time of 12 ns.

Detailed Application Field Plans

The IDT71V424S12PH8 is commonly used in various applications that require high-speed and reliable data storage. Some potential application fields include:

1. Computer Systems: Used as cache memory in CPUs to improve overall system performance.
2. Networking Equipment: Utilized for packet buffering and data storage in routers and switches.
3. Telecommunications: Employed in base stations and network infrastructure for storing control data.
4. Industrial Automation: Used in programmable logic controllers (PLCs) for data storage and processing.
5. Automotive Electronics: Integrated into automotive systems for storing critical data and firmware.

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-JC10: Similar SRAM device with 4 Meg x 4 organization and 12 ns access time.
2. Micron MT45W4MW16BFB-708 WT:B: Alternative SRAM module with 4 Meg x 4 configuration and 12 ns access time.
3. Cypress CY62157EV30LL-45ZSXIT: Comparable SRAM IC offering 4 Meg x 4 organization and 12 ns access time.

These alternative models provide similar specifications and functionality to the IDT71V424S12PH8, offering flexibility in choosing suitable memory devices for specific applications.

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