IDT71V424S10YI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides fast and reliable data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Type: Synchronous SRAM
• Memory Size: 4 Megabits (4M x 1)
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Data Retention: Greater than 20 years
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The IDT71V424S10YI has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VCCQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. WE#
42. OE#
43. CE#
44. VCC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and synchronized data transfers.
• Easy integration into various electronic systems due to its standard interface.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Reliable and durable memory storage. - Easy integration into existing electronic systems.

Disadvantages: - Limited memory size compared to newer memory technologies. - Higher cost per unit compared to some other memory options. - Requires additional control signals for proper operation.

Working Principles

The IDT71V424S10YI operates as a synchronous SRAM, which means that data is stored and retrieved based on clock signals. When the appropriate control signals are activated, the memory device can read or write data from/to specific memory locations. The synchronous design ensures that data transfers occur in a synchronized manner, enhancing overall system performance.

Detailed Application Field Plans

The IDT71V424S10YI is commonly used in various electronic devices that require fast and reliable data storage capabilities. Some of the application fields where this memory device finds usage include:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial automation systems
5. Consumer electronics (e.g., gaming consoles, set-top boxes)

Detailed and Complete Alternative Models

1. IDT71V416: 4 Megabit synchronous SRAM with a 16-pin SOIC package.
2. IDT71V424: 4 Megabit synchronous SRAM with a 32-pin TSOP package.
3. IDT71V432: 4 Megabit synchronous SRAM with a 44-pin PLCC package.
4. IDT71V464: 4 Megabit synchronous SRAM with a 48-pin TQFP package.

These alternative models offer similar functionality and performance but may differ in terms of package type and pin configuration.

In conclusion, the IDT71V424S10YI is a high-speed, low-power synchronous SRAM that provides reliable data storage capabilities for various electronic devices. Its compact package, easy integration, and wide range of applications make it a popular choice in the industry.