IDT71V424L12YI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: Integrated circuit package
• Essence: Non-volatile memory
• Packaging/Quantity: Varies based on manufacturer's specifications

Specifications

• Model: IDT71V424L12YI8
• Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit (Mbit)
• Voltage: 3.3V
• Speed: 12 nanoseconds (ns)
• Interface: Parallel
• Operating Temperature: -40°C to +85°C
• Pin Count: 44 pins

Detailed Pin Configuration

The IDT71V424L12YI8 has a total of 44 pins, each serving a specific function. The pin configuration is as follows:

1. A0-A19: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. CE1, CE2: Chip Enable Inputs
4. OE: Output Enable Input
5. WE: Write Enable Input
6. UB/LB: Upper Byte/Lower Byte Control Inputs
7. VCC: Power Supply
8. GND: Ground

(Note: This is a simplified representation of the pin configuration. Please refer to the datasheet for a complete and detailed pinout diagram.)

Functional Features

• High-speed access: The IDT71V424L12YI8 offers fast data retrieval and storage capabilities, making it suitable for applications requiring quick access to memory.
• Low power consumption: This memory device is designed to operate efficiently with minimal power consumption, making it ideal for battery-powered devices.
• Large storage capacity: With a capacity of 4 Mbit, the IDT71V424L12YI8 can store a significant amount of data.
• Reliable performance: The SRAM technology used in this device ensures reliable and stable operation.

Advantages and Disadvantages

Advantages: - High-speed performance allows for quick data access. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Reliable performance ensures consistent operation.

Disadvantages: - Limited storage capacity compared to other memory technologies like Flash or DRAM. - Volatile memory requires constant power supply to retain data.

Working Principles

The IDT71V424L12YI8 is based on Static Random Access Memory (SRAM) technology. It stores data using flip-flops, which retain information as long as power is supplied. When an address is provided, the corresponding data is read from or written to the memory cells. The chip enable (CE), output enable (OE), and write enable (WE) inputs control the flow of data.

Detailed Application Field Plans

The IDT71V424L12YI8 is commonly used in various applications, including:

1. Computer Systems:

   • Cache memory
   • Buffer memory
   • Register files

2. Communication Devices:

   • Routers
   • Switches
   • Network cards

3. Consumer Electronics:

   • Set-top boxes
   • Gaming consoles
   • Digital cameras

4. Industrial Equipment:

   • Control systems
   • Data loggers
   • Robotics

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-JC10: 4 Mbit SRAM, 10 ns speed, 44-pin package.
2. Micron MT45W4MW16BFB-708 WT:B: 4 Mbit SRAM, 12 ns speed, 44-pin package.
3. Cypress CY62157EV30LL-45ZSXI: 4 Mbit SRAM, 45 ns speed, 44-pin package.

(Note: The above alternative models are provided as examples. Please refer to the respective datasheets for complete specifications and compatibility with specific applications.)

This entry provides an overview of the IDT71V424L12YI8 memory device, including its category, use, characteristics, package, essence, packaging/quantity information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.