IDT71V424L12PHI8

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
Package: 44-pin Plastic Leaded Chip Carrier (PLCC)
Essence: Provides fast and reliable data storage and retrieval capabilities
Packaging/Quantity: Available in reels of 250 units

Specifications

Memory Type: Synchronous SRAM
Memory Size: 4 Megabits (512K x 8)
Operating Voltage: 3.3V
Access Time: 12 ns
Operating Temperature Range: -40°C to +85°C
Data Retention: Greater than 10 years
Interface: Parallel

Pin Configuration

The IDT71V424L12PHI8 has a total of 44 pins. The pin configuration is as follows:

A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
OE#
CE#
WE#
BYTE#
VCC
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
GND
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC

Functional Features

High-speed operation allows for quick data access and retrieval.
Low-power consumption makes it suitable for battery-powered devices.
Synchronous design ensures reliable and efficient data transfer.
Byte control feature enables selective read/write operations on individual bytes.
Easy integration with various microcontrollers and processors.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Reliable data storage and retrieval capabilities. - Easy integration with existing systems.

Disadvantages: - Limited memory size compared to other memory devices. - Higher cost per bit compared to larger capacity memory chips. - Requires additional control signals for proper operation.

Working Principles

The IDT71V424L12PHI8 is a synchronous SRAM that stores and retrieves data using an address and data bus. When the chip is enabled (CE# signal), the desired memory location is selected by providing the appropriate address on the address bus. The data can then be written to or read from the selected memory location using the write enable (WE#) and output enable (OE#) signals, respectively.

The synchronous design of the chip ensures that data transfers occur at specific clock cycles, allowing for efficient and reliable communication between the memory device and the controlling microcontroller or processor.

Application Field Plans

The IDT71V424L12PHI8 is commonly used in various applications that require fast and reliable data storage and retrieval. Some potential application fields include:

Embedded Systems: Used as main memory in embedded systems to store program code and data.
Networking Equipment: Utilized in routers, switches, and network appliances for buffering and caching purposes.
Telecommunications: Integrated into communication devices for storing call logs, message data, and configuration settings.
Industrial Automation: Employed in industrial control systems for storing critical process data and parameters.
Automotive Electronics: Used in automotive applications such as engine control units (ECUs) and infotainment systems.

Alternative Models

IDT71V424S: Same specifications but available in a smaller SOJ package.
IDT71V424L: Similar specifications but with a lower access time of 10 ns.
IDT71V416: Lower memory size variant with 2 Megabits capacity.

These alternative models provide options based on specific requirements and constraints of different applications.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V424L12PHI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V424L12PHI8 in technical solutions:

Q: What is IDT71V424L12PHI8? A: IDT71V424L12PHI8 is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V424L12PHI8? A: The IDT71V424L12PHI8 has a capacity of 4 megabits (Mb), which is equivalent to 512 kilobytes (KB).
Q: What is the operating voltage range for IDT71V424L12PHI8? A: The operating voltage range for IDT71V424L12PHI8 is typically between 3.0 volts (V) and 3.6V.
Q: What is the access time of IDT71V424L12PHI8? A: The access time of IDT71V424L12PHI8 is 12 nanoseconds (ns), meaning it takes approximately 12 ns to read or write data from/to the memory.
Q: Can IDT71V424L12PHI8 be used in battery-powered devices? A: Yes, IDT71V424L12PHI8 can be used in battery-powered devices as long as the operating voltage requirements are met.
Q: Does IDT71V424L12PHI8 support multiple read/write operations simultaneously? A: No, IDT71V424L12PHI8 is a synchronous SRAM and does not support simultaneous read/write operations.
Q: What is the package type for IDT71V424L12PHI8? A: IDT71V424L12PHI8 comes in a 44-pin plastic thin small outline package (TSOP).
Q: Can IDT71V424L12PHI8 be used in high-temperature environments? A: Yes, IDT71V424L12PHI8 is designed to operate in industrial temperature ranges, making it suitable for high-temperature environments.
Q: Does IDT71V424L12PHI8 have any built-in error correction capabilities? A: No, IDT71V424L12PHI8 does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.
Q: Are there any specific timing requirements for interfacing with IDT71V424L12PHI8? A: Yes, IDT71V424L12PHI8 has specific timing requirements for address setup/hold times, data setup/hold times, and clock frequency. These should be carefully followed for proper operation.

Please note that the answers provided here are general and may vary depending on the specific application and requirements. It is always recommended to refer to the datasheet and technical documentation provided by the manufacturer for accurate and detailed information.