IDT71V424L10Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 4 Meg x 4
• Voltage Range: 3.0V - 3.6V
• Access Time: 10ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 5mA (max)
• Package Dimensions: 12.8mm x 20.4mm x 1.2mm

Pin Configuration

The IDT71V424L10Y8 has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VCC
20. WE#
21. OE#
22. A0
23. A1
24. A2
25. A3
26. A4
27. A5
28. A6
29. A7
30. A8
31. A9
32. A10
33. A11
34. A12
35. A13
36. A14
37. A15
38. CE#
39. UB#
40. LB#
41. CLK
42. CLKEN#
43. ADSC#
44. ADSP#

Functional Features

• High-speed operation: The IDT71V424L10Y8 offers a fast access time of 10ns, allowing for quick data retrieval.
• Low-power consumption: Designed with power efficiency in mind, this SRAM consumes minimal standby current (5mA max).
• Synchronous operation: The device synchronizes its operations with an external clock signal (CLK), ensuring reliable data transfer.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low-power consumption helps conserve energy. - Synchronous operation ensures reliable data transfer.

Disadvantages: - Limited storage capacity (4 Meg x 4) compared to other memory devices. - Higher cost per bit compared to larger capacity memory chips.

Working Principles

The IDT71V424L10Y8 is based on synchronous static random access memory (SRAM) technology. It stores data in a volatile manner, meaning the data is lost when power is removed. The device operates synchronously with an external clock signal, allowing for precise timing and reliable data transfer. When a read or write operation is initiated, the appropriate address is provided, and the data is accessed from or written to the specified memory location.

Detailed Application Field Plans

The IDT71V424L10Y8 is commonly used in various applications that require high-speed and low-power memory solutions. Some potential application fields include:

1. Networking equipment: Used in routers, switches, and network interface cards to store routing tables, packet buffers, and configuration data.
2. Telecommunications systems: Employed in base stations, voice/data switches, and wireless communication devices for fast data storage and retrieval.
3. Industrial automation: Utilized in programmable logic controllers (PLCs), robotics, and control systems to store critical program instructions and data.
4. Medical devices: Integrated into medical imaging equipment, patient monitoring systems, and diagnostic devices for efficient data processing.

Detailed and Complete Alternative Models

1. IDT71V416L10Y - 4 Meg x 16 synchronous SRAM with the same characteristics and package as IDT71V424L10Y8.
2. IDT71V432L10Y - 4 Meg x 32 synchronous SRAM with higher storage capacity but similar characteristics and package.

These alternative models offer different storage capacities while maintaining similar features and compatibility with the IDT71V424L10Y8.

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