IDT71V416YL10PH

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: Plastic package
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Model: IDT71V416YL10PH
• Technology: CMOS
• Organization: 4 Meg x 16
• Voltage: 3.3V
• Speed: 10ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 44 pins

Detailed Pin Configuration

The IDT71V416YL10PH has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /OE
38. /BYTE
39. VSSQ
40. NC
41. NC
42. NC
43. NC
44. VCC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures energy efficiency.
• Large storage capacity enables the storage of a significant amount of data.
• CMOS technology provides reliable performance and compatibility with various systems.

Advantages and Disadvantages

Advantages: - High-speed performance allows for efficient data processing. - Low power consumption reduces energy costs. - Large storage capacity meets the demands of memory-intensive applications.

Disadvantages: - Limited compatibility with older systems that do not support CMOS technology. - Relatively higher cost compared to other memory devices.

Working Principles

The IDT71V416YL10PH is based on dynamic random access memory (DRAM) technology. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain the stored information. The memory cells are organized in a 4 Meg x 16 configuration, allowing for the storage of large amounts of data. The device operates at a voltage of 3.3V and has a speed of 10ns, enabling fast data access.

Detailed Application Field Plans

The IDT71V416YL10PH is commonly used in various electronic devices and systems that require high-speed and large-capacity memory. Some potential application fields include:

1. Computer Systems: Used as main memory in desktop computers, laptops, and servers.
2. Networking Equipment: Utilized for buffering and caching data in routers, switches, and network appliances.
3. Telecommunications: Integrated into communication devices such as smartphones, tablets, and modems for data storage and processing.
4. Industrial Control Systems: Employed in automation systems, robotics, and control units for storing program code and data.
5. Automotive Electronics: Used in automotive control units, infotainment systems, and navigation devices for data storage and retrieval.

Detailed and Complete Alternative Models

1. IDT71V416S
2. IDT71V416L
3. IDT71V416A
4. IDT71V416SA
5. IDT71V416LA

These alternative models offer similar functionality and characteristics to the IDT71V416YL10PH, providing options for different system requirements and design considerations.