IDT71V416VS15YI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Very Small Outline Package (VSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 4 Megabits (4M x 16 bits)
• Operating Voltage: 3.3V
• Access Time: 15 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Interface: Synchronous

Detailed Pin Configuration

The IDT71V416VS15YI8 has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VCC
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. WE#
37. OE#
38. CE#
39. UB#
40. LB#
41. CLK
42. CLKEN#
43. VCCQ
44. GND

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous interface ensures reliable and efficient communication with the device.
• Data retention capability of over 10 years ensures long-term storage of critical information.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Reliable data retention ensures data integrity over extended periods. - Synchronous interface simplifies integration into various electronic systems.

Disadvantages: - Limited memory size may not be sufficient for certain applications requiring larger storage capacity. - Higher cost compared to other memory technologies with similar capacities.

Working Principles

The IDT71V416VS15YI8 operates as a synchronous static random-access memory (SRAM). It stores and retrieves data using an array of memory cells organized in a 4M x 16 configuration. The device communicates with the host system through a synchronous interface, allowing for efficient data transfer. The memory cells retain data as long as power is supplied to the device.

Detailed Application Field Plans

The IDT71V416VS15YI8 is commonly used in various electronic devices that require fast and reliable data storage and retrieval capabilities. Some potential application fields include:

1. Computer Systems:

   • Cache memory in high-performance computers and servers.
   • Buffer memory in networking equipment.

2. Communication Devices:

   • Data buffering in routers and switches.
   • Packet buffering in network interface cards.

3. Consumer Electronics:

   • Image and video buffering in digital cameras.
   • Data storage in gaming consoles.

4. Industrial Control Systems:

   • Data logging and buffering in automation systems.
   • Program storage in programmable logic controllers (PLCs).

Detailed and Complete Alternative Models

1. IDT71V416S: Similar to IDT71V416VS15YI8, but operates at a different access time of 10 ns.
2. IDT71V416L: Low-power variant of IDT71V416VS15YI8 with reduced power consumption.
3. IDT71V416Z: Extended temperature range version of IDT71V416VS15YI8 (-40°C to +125°C).
4. IDT71V416W: Wide voltage range variant of IDT71V416VS15YI8 (2.7V to 5.5V).

These alternative models offer similar functionality and can be considered based on specific application requirements.

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