IDT71V416VS15YG8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed synchronous static random-access memory (SRAM)
  • Low power consumption
  • Large storage capacity
• Package: 44-pin Very Small Outline Package (VSOP)
• Essence: Provides fast and reliable data storage for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Organization: 4 Meg x 16 bits
• Access Time: 15 ns
• Operating Voltage: 3.3V
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V416VS15YG8 has a total of 44 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. VSSQ
37. WE#
38. CAS#
39. RAS#
40. OE#
41. CKE
42. CLK
43. VDD
44. VSS

Functional Features

• Synchronous operation with clock input (CLK)
• Supports burst mode for faster data transfer
• Provides separate chip enable (CE) and output enable (OE) signals
• Supports multiple read and write operations simultaneously
• Low power self-refresh mode for reduced power consumption during standby

Advantages and Disadvantages

Advantages: - High-speed operation for quick data access - Large storage capacity for storing a significant amount of data - Low power consumption for energy-efficient operation - Reliable and durable memory device

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited compatibility with certain older systems or devices

Working Principles

The IDT71V416VS15YG8 is based on synchronous SRAM technology. It operates by synchronizing data transfers with an external clock signal (CLK). The memory device supports various read and write operations, allowing fast and efficient data access. It utilizes a combination of address lines (A0-A15) and data lines (DQ0-DQ15) to store and retrieve information.

Detailed Application Field Plans

The IDT71V416VS15YG8 is widely used in various electronic devices that require high-speed and reliable data storage. Some common application fields include:

1. Computer Systems: Used as cache memory or main memory in desktops, laptops, and servers.
2. Networking Equipment: Utilized for buffering and storing data in routers, switches, and network appliances.
3. Telecommunications: Integrated into communication devices such as modems, routers, and telephony systems.
4. Industrial Control Systems: Employed in automation systems, robotics, and control units for data storage and processing.
5. Consumer Electronics: Found in gaming consoles, set-top boxes, digital cameras, and other multimedia devices.

Detailed and Complete Alternative Models

1. IDT71V416L10PHG - 4 Meg x 16-bit Synchronous SRAM, 10 ns access time, 3.3V operating voltage.
2. IDT71V416S12PHG - 4 Meg x 16-bit Synchronous SRAM, 12 ns access time, 3.3V operating voltage.
3. IDT71V416L15PHG - 4 Meg x 16-bit Synchronous SRAM, 15 ns access time, 3.3V operating voltage.
4. IDT71V416S20PHG - 4 Meg x 16-bit Synchronous SRAM, 20 ns access time, 3.3V operating voltage.

These alternative models offer similar functionality and performance characteristics to the IDT71V416VS15YG8, providing options for different speed requirements and operating conditions.

(Note: The above information is fictional and provided