IDT71V416VS15YG

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Very Small Outline Package (VSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Organization: 4 Meg x 16 bits
• Operating Voltage: 3.3V
• Access Time: 15 ns
• Clock Frequency: Up to 66 MHz
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C

Pin Configuration

The IDT71V416VS15YG has a total of 44 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. VSSQ
37. WE#
38. CAS#
39. RAS#
40. OE#
41. CKE
42. CLK
43. VDD
44. VSS

Functional Features

• High-speed operation: The IDT71V416VS15YG offers fast access times, making it suitable for applications that require quick data retrieval.
• Low-power consumption: This memory device is designed to minimize power consumption, making it ideal for battery-powered devices or energy-efficient systems.
• Synchronous interface: The SRAM operates synchronously with an external clock signal, allowing for efficient data transfer and synchronization with other components.
• Easy integration: The 44-pin VSOP package ensures compatibility with standard PCB layouts and facilitates easy integration into various electronic systems.

Advantages and Disadvantages

Advantages: - Fast access times enable rapid data processing. - Low-power consumption prolongs battery life in portable devices. - Synchronous interface allows for efficient data transfer. - Compact package size facilitates integration into space-constrained designs.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per bit compared to alternative memory options.

Working Principles

The IDT71V416VS15YG is a synchronous SRAM that stores and retrieves data using a combination of transistors and capacitors. It operates by storing binary information in the form of electrical charges within the memory cells. The synchronous interface ensures that data transfers occur in sync with an external clock signal, enabling reliable and efficient communication between the memory device and the rest of the system.

Application Field Plans

The IDT71V416VS15YG is commonly used in various electronic systems that require high-speed and low-power memory solutions. Some potential application fields include:

1. Embedded Systems: Used as cache memory in microcontrollers and digital signal processors (DSPs) to enhance system performance.
2. Networking Equipment: Employed in routers, switches, and network interface cards (NICs) for fast data buffering and packet processing.
3. Telecommunications: Utilized in base stations, voice/data switches, and communication infrastructure equipment for storing temporary data during call processing.
4. Industrial Automation: Integrated into programmable logic controllers (PLCs), motor control systems, and robotics for efficient data storage and retrieval.

Alternative Models

• IDT71V416L15PHG
• IDT71V416S10PHG
• IDT71V416S12PHG
• IDT71V416S15PHG
• IDT71V416S20PHG

These alternative models offer similar specifications and functionality to the IDT71V416VS15YG, providing customers with options based on their specific requirements.

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