IDT71V416VS10Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
• Package: 44-pin Very Small Outline Package (VSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 4 Megabits (4M x 16)
• Operating Voltage: 3.3V
• Access Time: 10 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years
• Interface: Synchronous

Detailed Pin Configuration

The IDT71V416VS10Y8 has a total of 44 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. WE#
12. OE#
13. A0
14. A1
15. A2
16. A3
17. A4
18. A5
19. A6
20. A7
21. A8
22. A9
23. A10
24. A11
25. A12
26. A13
27. A14
28. A15
29. A16
30. A17
31. A18
32. A19
33. A20
34. A21
35. A22
36. A23
37. VDD
38. NC
39. CLK
40. CKE
41. CS#
42. DQM#
43. DQ8
44. DQ9

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption ensures efficient energy usage.
• Synchronous interface enables synchronized communication with other devices.
• Reliable data retention for extended periods of time.
• Easy integration into existing circuit designs.

Advantages and Disadvantages

Advantages: - Fast access time improves overall system performance. - Low power consumption reduces energy costs. - Synchronous interface simplifies communication with other components. - Reliable data retention ensures data integrity.

Disadvantages: - Limited memory size compared to newer models. - Higher cost compared to lower capacity memory devices. - Requires careful handling due to its small package size.

Working Principles

The IDT71V416VS10Y8 operates as a synchronous SRAM, utilizing an internal clock signal to synchronize data transfers. When the chip is enabled, data can be written or read from the memory cells based on the control signals provided. The synchronous nature of the device ensures that data transfers occur at precise intervals, allowing for efficient communication with other components in the system.

Detailed Application Field Plans

The IDT71V416VS10Y8 is commonly used in various applications, including:

1. Computer systems - Used as cache memory to improve overall system performance.
2. Networking equipment - Provides fast data storage for routers, switches, and network appliances.
3. Telecommunications - Used in base stations, switches, and other communication infrastructure.
4. Industrial automation - Enables quick data access in control systems and PLCs.
5. Automotive electronics - Used in vehicle control units and infotainment systems.

Detailed and Complete Alternative Models

1. IDT71V416S10PHG - 4 Megabit (4M x 16) synchronous SRAM, operating at 5V.
2. IDT71V416L10PH - 4 Megabit (4M x 16) low-power synchronous SRAM, operating at 3.3V.
3. IDT71V416S10Y - 4 Megabit (4M x 16) synchronous SRAM, operating at 3.3V.

These alternative models offer similar functionality and can be considered as replacements for the IDT71V416VS10Y8 in various applications.

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