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IDT71V416VL12PHI8

IDT71V416VL12PHI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 44-pin Very Thin Quad Flat Pack (VQFP)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Size: 4 Megabits (4M x 1)
  • Operating Voltage: 3.3V
  • Access Time: 12 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: More than 10 years
  • Interface: Synchronous

Detailed Pin Configuration

The IDT71V416VL12PHI8 has a total of 44 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. DQ0
  35. DQ1
  36. DQ2
  37. DQ3
  38. DQ4
  39. DQ5
  40. DQ6
  41. DQ7
  42. GND
  43. WE#
  44. OE#

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption makes it suitable for battery-powered devices.
  • Synchronous interface ensures reliable data transfer.
  • Data retention capability of more than 10 years ensures long-term storage.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Reliable synchronous interface ensures accurate data transfer. - Long data retention period provides secure storage.

Disadvantages: - Limited memory size (4 Megabits) may not be sufficient for certain applications requiring larger storage capacity. - Higher cost compared to other memory technologies such as NAND flash.

Working Principles

The IDT71V416VL12PHI8 is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates at a voltage of 3.3V and has an access time of 12 ns. The device uses address lines (A0-A31) to specify the location of data to be read from or written to. The data lines (DQ0-DQ7) are used for bidirectional data transfer. The control signals WE# (Write Enable) and OE# (Output Enable) control the read and write operations.

Detailed Application Field Plans

The IDT71V416VL12PHI8 is commonly used in various applications, including:

  1. Computer systems - Used as cache memory to improve system performance.
  2. Networking equipment - Provides fast data buffering capabilities.
  3. Telecommunications devices - Enables quick data processing in communication protocols.
  4. Industrial automation - Stores critical data for real-time control systems.
  5. Consumer electronics - Used in gaming consoles, set-top boxes, and other devices requiring fast data access.

Detailed and Complete Alternative Models

  1. IDT71V416VL12PHI: Similar to IDT71V416VL12PHI8 but without the 44th pin (OE#).
  2. IDT71V416VL15PHI8: Same memory size and package as IDT71V416VL12PHI8 but with a faster access time of 15 ns.
  3. IDT71V416VL20PHI8: Same memory size and package as IDT71V416VL12PHI8 but with a faster access time of 20 ns.

These alternative models provide options with different access times to suit specific application requirements.

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Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V416VL12PHI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V416VL12PHI8 in technical solutions:

  1. Q: What is IDT71V416VL12PHI8? A: IDT71V416VL12PHI8 is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V416VL12PHI8? A: IDT71V416VL12PHI8 has a capacity of 4 megabits (Mbit), which is equivalent to 512 kilobytes (KB).

  3. Q: What is the operating voltage range for IDT71V416VL12PHI8? A: The operating voltage range for IDT71V416VL12PHI8 is typically between 3.0 volts (V) and 3.6V.

  4. Q: What is the access time of IDT71V416VL12PHI8? A: The access time of IDT71V416VL12PHI8 is 12 nanoseconds (ns), meaning it takes approximately 12 ns to read or write data from/to the memory.

  5. Q: What is the package type for IDT71V416VL12PHI8? A: IDT71V416VL12PHI8 comes in a 44-pin plastic thin small outline package (TSOP).

  6. Q: Can IDT71V416VL12PHI8 be used in battery-powered devices? A: Yes, IDT71V416VL12PHI8 can be used in battery-powered devices as it operates within the typical voltage range of such devices.

  7. Q: Is IDT71V416VL12PHI8 compatible with common microcontrollers? A: Yes, IDT71V416VL12PHI8 is compatible with most microcontrollers that support SRAM interfaces.

  8. Q: Can IDT71V416VL12PHI8 be used in industrial applications? A: Yes, IDT71V416VL12PHI8 is suitable for use in industrial applications due to its robust design and operating voltage range.

  9. Q: Does IDT71V416VL12PHI8 have any built-in error correction capabilities? A: No, IDT71V416VL12PHI8 does not have built-in error correction capabilities. External error correction techniques may be required if needed.

  10. Q: Are there any specific timing requirements for interfacing with IDT71V416VL12PHI8? A: Yes, IDT71V416VL12PHI8 has specific timing requirements for address setup, hold times, and data access timings. These should be followed as per the datasheet provided by IDT.

Please note that the answers provided here are general and may vary depending on the specific application and requirements. It is always recommended to refer to the official datasheet and consult with technical experts for accurate information.