IDT71V416VL12PHI

Product Overview

Category

The IDT71V416VL12PHI belongs to the category of Integrated Circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Low power consumption
• Large storage capacity
• Reliable data retention
• Compatibility with various electronic systems

Package

The IDT71V416VL12PHI is available in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture and physical damage.

Essence

The essence of the IDT71V416VL12PHI lies in its ability to provide efficient and reliable memory storage and retrieval capabilities for electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the quantity ordered. The packaging ensures safe transportation and easy handling during manufacturing processes.

Specifications

• Model: IDT71V416VL12PHI
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 4 Megabits (512K x 8)
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Organization: 512K words x 8 bits
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: 44-pin TSOP (Thin Small Outline Package)

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /CE1
19. /CE2
20. /OE
21. /WE
22. I/O0
23. I/O1
24. I/O2
25. I/O3
26. I/O4
27. I/O5
28. I/O6
29. I/O7
30. GND
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed data access and retrieval
• Low power consumption for energy efficiency
• Non-volatile memory storage
• Easy integration with various electronic systems
• Reliable data retention even in harsh environmental conditions

Advantages and Disadvantages

Advantages

• Fast access time enhances overall system performance
• Low power consumption prolongs battery life in portable devices
• Large storage capacity accommodates complex data requirements
• Compatibility with different electronic systems allows for versatile applications

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity
• Sensitivity to electrostatic discharge (ESD) requires proper handling during installation and maintenance

Working Principles

The IDT71V416VL12PHI operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store and retrieve data, providing fast and reliable access times. The memory cells retain their contents as long as power is supplied to the device.

Detailed Application Field Plans

The IDT71V416VL12PHI finds extensive use in various electronic applications, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

1. IDT71V416S
2. IDT71V416SA
3. IDT71V416V
4. IDT71V416VA
5. IDT71V416L
6. IDT71V416LA

These alternative models offer similar functionality and specifications, providing options for different system requirements.

In conclusion, the IDT71V416VL12PHI is a high-performance SRAM integrated circuit that offers fast access times, low power consumption, and large storage capacity. Its versatility makes it suitable for various electronic applications, although proper handling and cost considerations should be taken into account.