IDT71V416VL12PH

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
• Package: 44-pin Very Low Profile Quad Flat Package (VQFP)
• Essence: Provides high-performance data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 4 Megabits (4M x 16 bits)
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5 mA
• Package Dimensions: 10mm x 10mm

Pin Configuration

The IDT71V416VL12PH has a total of 44 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. VCC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. WE#
35. OE#
36. CE#
37. UB#
38. LB#
39. CLK
40. VSS
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed operation allows for fast data access and retrieval
• Low-power consumption makes it suitable for battery-powered devices
• Synchronous design ensures reliable and efficient data transfer
• Easy integration into various electronic systems due to its compact package size
• 4M x 16 configuration provides ample storage capacity for a wide range of applications

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data processing - Low-power consumption prolongs battery life in portable devices - Compact package size facilitates easy integration into electronic systems - Ample storage capacity for various applications

Disadvantages: - Limited memory size compared to higher-capacity alternatives - Higher cost per bit compared to larger memory devices

Working Principles

The IDT71V416VL12PH is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates based on the synchronous design, where data transfers are synchronized with a clock signal. The device utilizes address lines to select specific memory locations and control signals to manage read and write operations.

Detailed Application Field Plans

The IDT71V416VL12PH can be used in various electronic devices and systems, including but not limited to: 1. Personal computers 2. Networking equipment 3. Telecommunications devices 4. Industrial automation systems 5. Consumer electronics 6. Automotive electronics 7. Medical equipment

Alternative Models

Here are some alternative models that offer similar functionality to the IDT71V416VL12PH: 1. Micron MT45W4MW16BFB-708 WT 2. Samsung K6R4016V1D-UI10 3. Cypress CY7C1041CV33-15ZSXE 4. Renesas R1LV0416DSB-5SI

These alternative models provide comparable memory size, operating characteristics, and package options.

In conclusion, the IDT71V416VL12PH is a high-speed, low-power synchronous SRAM that offers reliable data storage and retrieval capabilities. Its compact package and versatile application field make it suitable for various electronic devices and systems. While it has limitations in terms of memory size and cost per bit, it provides advantages such as fast operation, low power consumption, and easy integration.