IDT71V416VL10PH8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: Plastic package
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Available in various packaging options, such as trays or reels, with a quantity of [insert quantity]

Specifications

• Memory Type: DRAM
• Density: 4 Megabits (4M)
• Organization: 256K x 16
• Access Time: 10 ns
• Operating Voltage: 3.3V
• Interface: Parallel
• Operating Temperature: [insert temperature range]
• Data Retention: [insert retention period]

Pin Configuration

The IDT71V416VL10PH8 has the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. WE#
27. CAS#
28. RAS#
29. OE#
30. NC
31. VSS

Note: The above pin configuration is for reference only. Please refer to the datasheet for the complete and accurate pin configuration.

Functional Features

• High-speed access and data transfer
• Low power consumption
• Easy integration into existing systems
• Reliable performance and data retention
• Compatibility with various memory controllers

Advantages

• Fast access time for efficient data retrieval
• Large storage capacity for storing a significant amount of data
• Low power consumption, making it suitable for portable devices
• Easy integration into existing systems due to its standard interface
• Reliable performance and data retention ensure data integrity

Disadvantages

• Higher cost compared to other memory technologies
• Limited scalability in terms of density compared to newer memory technologies
• Susceptible to data loss if not properly powered or refreshed

Working Principles

The IDT71V416VL10PH8 is based on the working principle of dynamic random access memory (DRAM). It stores data as electrical charges in capacitors within each memory cell. To read or write data, the memory controller sends appropriate signals to the address and control pins, enabling the desired operation.

During a read operation, the selected memory cell's charge is sensed and amplified to retrieve the stored data. For a write operation, the memory controller applies the necessary voltage to store the desired data by charging or discharging the capacitors.

Detailed Application Field Plans

The IDT71V416VL10PH8 is commonly used in various applications, including:

1. Personal computers
2. Servers
3. Networking equipment
4. Telecommunications devices
5. Consumer electronics
6. Industrial automation systems

Alternative Models

Here are some alternative models that offer similar functionality:

1. [Model 1]
2. [Model 2]
3. [Model 3]
4. [Model 4]
5. [Model 5]

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, the IDT71V416VL10PH8 is a high-performance DRAM memory device with a large storage capacity and low power consumption. It finds applications in various fields, including personal computers, servers, networking equipment, and consumer electronics. While it offers advantages such as fast access time and reliable performance, it also has limitations like higher cost and limited scalability compared to newer memory technologies.