IDT71V416S12PHI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (Mbit)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Clock Frequency: 83 MHz
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Pin Configuration

The IDT71V416S12PHI8 has a total of 44 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. OE#
18. WE#
19. BYTE#
20. VCC
21. DQ0
22. DQ1
23. DQ2
24. DQ3
25. DQ4
26. DQ5
27. DQ6
28. DQ7
29. GND
30. CLK
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable data transfer and synchronization with the system clock.
• Byte write capability enables efficient utilization of memory space.
• Easy integration into existing systems due to its parallel interface.

Advantages and Disadvantages

Advantages: - Fast access time and high clock frequency enable efficient data processing. - Low power consumption extends battery life in portable devices. - Reliable synchronous operation ensures accurate data transfer.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to alternative memory options.

Working Principles

The IDT71V416S12PHI8 operates as a synchronous SRAM, where data is stored and retrieved based on the system clock signal. When the chip select (CS) signal is active, the address lines (A0-A15) specify the location in memory to read from or write to. The output enable (OE#) and write enable (WE#) signals control the direction of data flow. The data lines (DQ0-DQ7) carry the actual data being read or written.

Detailed Application Field Plans

The IDT71V416S12PHI8 is commonly used in various applications that require fast and reliable data storage and retrieval. Some potential application fields include:

1. Computer Systems: Used as cache memory or main memory in computer systems to enhance performance.
2. Networking Equipment: Employed in routers, switches, and network cards for buffering and temporary data storage.
3. Telecommunications: Utilized in base stations, switches, and communication devices for data buffering and processing.
4. Industrial Control Systems: Integrated into control units and PLCs to store critical data and program instructions.
5. Automotive Electronics: Used in automotive systems for storing sensor data, firmware, and configuration settings.

Detailed and Complete Alternative Models

1. IDT71V416L: Similar to IDT71V416S12PHI8 but operates at a lower voltage of 2.5V.
2. Cypress CY62167EV30: Synchronous SRAM with the same density and organization, operating at 3.0V.
3. Micron MT45W4MW16BFB-708 WT: High-speed synchronous SRAM with a larger capacity of 64 Megabits (Mb).

These alternative models offer similar functionality and can be considered based on specific project requirements.

Word count: 510 words