IDT71V416S12PHI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 4 Megabits (4M x 16)
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Interface: Synchronous

Detailed Pin Configuration

The IDT71V416S12PHI has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VCCQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. WE#
37. OE#
38. CE#
39. UB#
40. LB#
41. CLK
42. VCC
43. GND
44. NC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous interface ensures reliable and efficient communication with the memory device.
• Data retention capability of over 10 years ensures long-term storage of critical information.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption extends battery life in portable devices. - Reliable data retention ensures data integrity over extended periods. - Synchronous interface simplifies integration into existing systems.

Disadvantages: - Limited memory size compared to other memory devices. - Higher cost per bit compared to larger capacity memory chips. - Requires careful handling and proper ESD precautions during installation.

Working Principles

The IDT71V416S12PHI operates as a synchronous static random access memory (SRAM). It stores and retrieves data using an address bus, data bus, and control signals. The memory cells are organized in a 4M x 16 configuration, allowing for the storage of up to 4 megabits of data. The synchronous interface ensures that data is transferred in sync with the clock signal, enabling reliable and efficient communication between the memory device and the host system.

Detailed Application Field Plans

The IDT71V416S12PHI is commonly used in various electronic devices and systems that require fast and reliable data storage and retrieval capabilities. Some potential application fields include:

1. Computer Systems: Used as cache memory or main memory in computer systems to enhance performance and enable quick data access.
2. Networking Equipment: Integrated into routers, switches, and network appliances to store routing tables, packet buffers, and other critical data.
3. Telecommunications: Utilized in base stations, switches, and communication infrastructure for storing call records, signaling information, and voice data.
4. Industrial Automation: Incorporated into control systems, PLCs (Programmable Logic Controllers), and robotics for storing program code, sensor data, and configuration settings.
5. Automotive Electronics: Used in automotive control units, infotainment systems, and navigation devices for storing firmware, maps, and user data.

Detailed and Complete Alternative Models

1. IDT71V416S10PHI: Similar to IDT71V416S12PHI but with a faster access time of 10 ns.
2. IDT71V416S15PHI: Similar to IDT71V416S12PHI but with a slower access time of 15 ns.
3. IDT71V416S20PHI: Similar to IDT71V416S12PHI but with a slower access time of 20 ns.
4. **IDT71V416