IDT71V416S12PH

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V416S12PH is a high-speed, low-power CMOS static random access memory (SRAM) designed for use in various electronic devices and systems. It provides fast and reliable data storage and retrieval capabilities.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable performance - Easy integration into electronic circuits

Package: The IDT71V416S12PH is available in a 44-pin plastic thin quad flat pack (TQFP) package. This package offers excellent thermal dissipation properties and ease of handling during assembly.

Essence: The essence of the IDT71V416S12PH lies in its ability to provide high-speed and efficient data storage, making it an essential component in many electronic devices and systems.

Packaging/Quantity: The IDT71V416S12PH is typically sold in reels containing a quantity of 250 units per reel.

Specifications

• Organization: 4 Meg x 16
• Supply Voltage: 3.3V ± 0.3V
• Access Time: 12 ns
• Standby Current: 10 mA (max)
• Operating Temperature Range: -40°C to +85°C
• Data Retention Voltage: 2.0V (min)

Detailed Pin Configuration

The IDT71V416S12PH has a total of 44 pins. Here is a detailed pin configuration:

1. A0-A19: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE: Write Enable
4. OE: Output Enable
5. CE1, CE2: Chip Enables
6. UB/LB: Upper Byte/Lower Byte Control
7. VCC: Power Supply
8. GND: Ground

(Note: The pin configuration may vary depending on the package variant.)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures energy efficiency in electronic systems.
• Large storage capacity provides ample space for data storage requirements.
• Reliable performance ensures data integrity and system stability.
• Easy integration into electronic circuits simplifies the design and implementation process.

Advantages and Disadvantages

Advantages: - High-speed operation enables fast data processing. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data storage needs. - Reliable performance ensures data integrity and system stability. - Easy integration simplifies circuit design and assembly.

Disadvantages: - Limited compatibility with certain older systems or devices. - Higher cost compared to alternative memory technologies. - Sensitivity to electrostatic discharge (ESD) requires careful handling during installation.

Working Principles

The IDT71V416S12PH operates based on the principles of static random access memory (SRAM). It stores data using flip-flops, which retain their state as long as power is supplied. When an address is provided, the corresponding data is accessed and made available for reading or writing. The SRAM technology allows for fast and direct access to data without the need for refreshing, making it suitable for applications requiring high-speed data storage.

Detailed Application Field Plans

The IDT71V416S12PH finds application in various electronic devices and systems, including but not limited to: - Personal computers and laptops - Networking equipment - Telecommunications devices - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

1. IDT71V416L: Similar to IDT71V416S12PH, but with a lower access time of 10 ns.
2. IDT71V416S15PH: Similar to IDT71V416S12PH, but with a higher access time of 15 ns.
3. IDT71V416S20PH: Similar to IDT71V416S12PH, but with a higher access time of 20 ns.

(Note: The alternative models listed above are for illustrative purposes and may not represent an exhaustive list.)

In conclusion, the IDT71V416S12PH is a high-speed, low-power CMOS SRAM that offers reliable data storage capabilities. Its characteristics, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models make it a versatile component in various electronic devices and systems.