IDT71V416L15YI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Non-volatile memory
• Packaging/Quantity: Available in reels of 250 units

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Megabit (4M) x 16-bit
• Operating Voltage: 3.3V
• Access Time: 15 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years
• Standby Current: Less than 10µA

Pin Configuration

The IDT71V416L15YI8 has a total of 44 pins, which are assigned specific functions. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /CE1
19. /CE2
20. /OE
21. /WE
22. I/O0
23. I/O1
24. I/O2
25. I/O3
26. I/O4
27. I/O5
28. I/O6
29. I/O7
30. I/O8
31. I/O9
32. I/O10
33. I/O11
34. I/O12
35. I/O13
36. I/O14
37. I/O15
38. /BYTE
39. /UB
40. /LB
41. /RESET
42. VSS
43. NC
44. VCC

Functional Features

• High-speed access and data transfer
• Non-volatile memory retains data even when power is disconnected
• Low power consumption for energy-efficient operation
• Large storage capacity allows for storing a significant amount of data
• Easy integration into existing circuit designs

Advantages and Disadvantages

Advantages: - Fast access time enables quick data retrieval - Low power consumption prolongs battery life in portable devices - Non-volatile memory ensures data integrity during power interruptions - Large storage capacity accommodates complex applications

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited endurance due to the finite number of write cycles - Sensitive to electromagnetic interference (EMI) - Requires careful handling and storage to prevent damage

Working Principles

The IDT71V416L15YI8 operates based on the principles of static random access memory (SRAM). It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a 4M x 16-bit configuration, allowing for simultaneous read and write operations. The device utilizes address lines to select specific memory locations and control signals to manage read and write operations.

Application Field Plans

The IDT71V416L15YI8 finds application in various fields, including:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial automation
5. Automotive electronics
6. Consumer electronics

Alternative Models

Below are some alternative models that offer similar functionality:

1. Micron MT45W4MW16BFB-708 WT
2. Samsung K6R4016V1D-UI10
3. Cypress CY62167EV30LL-45BVXI
4. Renesas R1LV0416DSB-7SI#B0
5. NXP PDMB4X16U8-15BZBE

These models can be considered as alternatives to the IDT71V416L15YI8, depending on specific requirements and compatibility with the target system.

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