IDT71V416L12Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin plastic thin quad flat pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 4 Megabits (4M x 16 bits)
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5 mA
• Package Dimensions: 10mm x 10mm x 1.4mm

Pin Configuration

The IDT71V416L12Y8 has a total of 44 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. WE#
35. OE#
36. CE1#
37. CE2#
38. CE3#
39. CE4#
40. BYTE#
41. LB#
42. UB#
43. CLK
44. GND

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and synchronized data transfers.
• Byte-write capability enables efficient memory utilization.
• Multiple chip enable signals provide flexibility in memory organization.

Advantages

• Fast access time enhances overall system performance.
• Low standby current prolongs battery life in portable devices.
• Reliable data retention ensures data integrity over extended periods.
• Compact package size saves board space in electronic designs.
• Byte-write capability offers efficient memory management.

Disadvantages

• Limited memory size may not be sufficient for certain applications.
• Higher cost compared to other memory technologies like NAND flash.
• Requires external clock signal for proper operation.

Working Principles

The IDT71V416L12Y8 is a synchronous SRAM that stores and retrieves data using an internal clock signal. It operates by addressing specific memory locations through the address pins (A0-A15) and reading or writing data through the data pins (DQ0-DQ15). The chip enable signals (CE1#, CE2#, CE3#, CE4#) control the activation of the memory device, while the write enable signal (WE#) and output enable signal (OE#) manage the read and write operations. The memory can be organized into different configurations based on the chip enable signals used.

Detailed Application Field Plans

The IDT71V416L12Y8 is widely used in various electronic devices that require fast and reliable data storage. Some of the common application fields include:

1. Computer Systems: Used as cache memory or main memory in computer systems to enhance overall performance.
2. Networking Equipment: Employed in routers, switches, and network cards for buffering and storing data packets.
3. Telecommunications: Utilized in base stations, modems, and telecommunication equipment for data buffering and processing.
4. Consumer Electronics: Integrated into gaming consoles, set-top boxes, and digital cameras for data storage and retrieval.
5. Industrial Automation: Applied in control systems, PLCs, and robotics for storing critical data and program instructions.

Detailed and Complete Alternative Models

• IDT71V416S: Similar to IDT71V416L12Y8 but operates at a faster access time of 10 ns.
• IDT71V416L15: Offers a larger memory size of 8 Megabits (8M x 16 bits) with a slightly slower access time of 15 ns.
• IDT71V416S25: Provides a higher operating voltage of 5V