IDT71V416L12Y

Product Overview

Category

The IDT71V416L12Y belongs to the category of integrated circuits (ICs) and specifically falls under the category of static random-access memory (SRAM) chips.

Use

This SRAM chip is commonly used in various electronic devices and systems where fast and temporary data storage is required. It provides high-speed read and write operations, making it suitable for applications that demand quick access to data.

Characteristics

• High-speed operation: The IDT71V416L12Y offers fast access times, allowing for efficient data retrieval and storage.
• Low power consumption: This chip is designed to consume minimal power, making it suitable for battery-powered devices.
• Large storage capacity: With a capacity of 4 megabits (Mbit), this SRAM chip can store a significant amount of data.
• Reliable performance: The IDT71V416L12Y is known for its stable and reliable operation, ensuring data integrity.

Package

The IDT71V416L12Y is available in a standard 44-pin plastic thin quad flat pack (TQFP) package. This package type offers ease of handling and compatibility with automated assembly processes.

Essence

The essence of the IDT71V416L12Y lies in its ability to provide high-speed and reliable data storage in a compact form factor. Its efficient design and low power consumption make it a versatile choice for various electronic applications.

Packaging/Quantity

The IDT71V416L12Y is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies but is commonly available in quantities of 100 or more.

Specifications

• Organization: 512K words x 8 bits
• Supply voltage: 3.3V
• Access time: 12 ns
• Operating temperature range: -40°C to +85°C
• Standby current: 10 mA (typical)
• Package dimensions: 10mm x 10mm

Detailed Pin Configuration

The IDT71V416L12Y has a total of 44 pins. The pin configuration is as follows:

1. A0-A18: Address inputs
2. DQ0-DQ7: Data inputs/outputs
3. WE: Write enable
4. OE: Output enable
5. CE1, CE2: Chip enables
6. VCC: Power supply
7. GND: Ground

(Note: The remaining pins are not listed for brevity.)

Functional Features

• High-speed read and write operations
• Byte-wide data access
• Asynchronous operation
• Easy interfacing with microcontrollers and other digital devices
• Low power consumption in standby mode
• Automatic power-down when deselected

Advantages and Disadvantages

Advantages

• Fast access times enable quick data retrieval and storage.
• Low power consumption makes it suitable for battery-powered devices.
• Reliable performance ensures data integrity.
• Large storage capacity allows for ample data storage.

Disadvantages

• Limited storage capacity compared to other memory technologies like NAND flash or hard drives.
• Volatile memory requires constant power supply to retain data.

Working Principles

The IDT71V416L12Y operates based on the principles of static random-access memory. It stores data using flip-flops, which retain their state until changed. When an address is provided, the chip retrieves the corresponding data from the memory array and outputs it through the data pins. Write operations involve storing data at the specified address.

Detailed Application Field Plans

The IDT71V416L12Y finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Communication devices - Industrial control systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

Some alternative models to the IDT71V416L12Y include: - Samsung K6R4016V1D - Micron MT45W4MW16BFB-708 WT - Cypress CY7C1041DV33-10ZSXI

These alternatives offer similar functionality and specifications, providing options for different design requirements.

(Note: The list of alternative models can be expanded based on specific needs and availability.)

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