IDT71V416L10YI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Thin Small Outline Package (TSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities for various electronic devices.
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel.

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (4M)
• Organization: 512K x 8 bits
• Operating Voltage: 3.3V
• Access Time: 10 nanoseconds (ns)
• Clock Frequency: 100 MHz
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years

Pin Configuration

The IDT71V416L10YI8 has a total of 44 pins, which are assigned specific functions. The detailed pin configuration is as follows:

1. VCCQ: Power supply for output buffers
2. DQ0-DQ7: Data input/output pins
3. GND: Ground
4. A0-A18: Address input pins
5. WE#: Write Enable input
6. OE#: Output Enable input
7. CE#: Chip Enable input
8. UB#/LB#: Upper Byte/Lower Byte control inputs
9. CLK: Clock input
10. NC: No Connection (reserved)

(Continues for the remaining pins...)

Functional Features

• High-speed operation allows for quick data access and transfer.
• Low-power consumption ensures efficient use of energy.
• Synchronous design enables synchronized data transfers with the clock signal.
• Reliable data retention ensures long-term storage of information.
• Easy integration into various electronic devices due to its compact package.

Advantages and Disadvantages

Advantages: - Fast access time and high-speed operation - Low power consumption - Reliable data retention - Compact package for easy integration

Disadvantages: - Limited memory capacity (4 Megabits) - Higher cost compared to other memory technologies

Working Principles

The IDT71V416L10YI8 operates as a synchronous SRAM, where data is stored and retrieved using an address and control signals synchronized with a clock input. When the chip enable (CE#) and output enable (OE#) signals are active, the addressed data can be read from or written to the memory array. The write enable (WE#) signal controls the write operation, while the upper byte/lower byte control inputs (UB#/LB#) allow for byte-level operations.

Detailed Application Field Plans

The IDT71V416L10YI8 is widely used in various electronic devices that require fast and reliable data storage and retrieval capabilities. Some common application fields include:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial automation systems
5. Consumer electronics

Alternative Models

For users seeking alternative options, the following models provide similar functionality to the IDT71V416L10YI8:

1. Micron MT48LC4M32B2P-6A: 4 Megabit Synchronous SRAM, 512K x 8 bits, 10ns access time.
2. Samsung K6R4016V1D-TC10: 4 Megabit Synchronous SRAM, 512K x 8 bits, 10ns access time.
3. Cypress CY7C1041DV33-10ZSXI: 4 Megabit Synchronous SRAM, 512K x 8 bits, 10ns access time.

These alternative models offer similar specifications and can be considered as suitable replacements for the IDT71V416L10YI8 in various applications.

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