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IDT71V416L10BEI8

IDT71V416L10BEI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed performance
    • Low power consumption
    • Large storage capacity
  • Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
  • Essence: Non-volatile memory
  • Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Density: 4 Megabits (4Mbit)
  • Organization: 512K words x 8 bits
  • Access Time: 10 nanoseconds (ns)
  • Operating Voltage: 3.3 volts (V)
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Greater than 20 years
  • Package Dimensions: 10mm x 10mm

Pin Configuration

The IDT71V416L10BEI8 has a total of 44 pins. The pin configuration is as follows:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. A8
  10. A9
  11. A10
  12. A11
  13. A12
  14. A13
  15. A14
  16. A15
  17. /CE1
  18. /CE2
  19. /OE
  20. /WE
  21. I/O0
  22. I/O1
  23. I/O2
  24. I/O3
  25. Vcc
  26. GND
  27. I/O4
  28. I/O5
  29. I/O6
  30. I/O7
  31. /UB
  32. /LB
  33. /CE3
  34. /CE4
  35. /OE2
  36. /WE2
  37. I/O8
  38. I/O9
  39. I/O10
  40. I/O11
  41. Vcc
  42. GND
  43. I/O12
  44. I/O13

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low power consumption ensures efficient energy usage.
  • Large storage capacity enables the storage of a significant amount of data.
  • Non-volatile memory retains data even when power is disconnected.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements.

Disadvantages: - Relatively higher cost compared to other memory technologies. - Limited endurance due to the finite number of write cycles.

Working Principles

The IDT71V416L10BEI8 is a static random access memory (SRAM) device. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized into 512K words, with each word consisting of 8 bits. Accessing data from the memory involves providing the appropriate address and control signals to enable reading or writing operations.

Detailed Application Field Plans

The IDT71V416L10BEI8 is commonly used in various electronic systems that require high-speed and non-volatile memory. Some potential application fields include:

  1. Embedded Systems: Used in microcontrollers, digital signal processors, and other embedded devices to store program code and data.
  2. Networking Equipment: Employed in routers, switches, and network interface cards to buffer data packets and facilitate efficient data transfer.
  3. Telecommunications: Utilized in telecommunication infrastructure equipment for buffering and storing voice and data traffic.
  4. Industrial Automation: Integrated into industrial control systems to store configuration data, process variables, and program code.
  5. Medical Devices: Incorporated into medical equipment for data storage and processing in applications such as patient monitoring and diagnostics.

Detailed and Complete Alternative Models

  1. IDT71V416S10PHI: Similar to IDT71V416L10BEI8 but operates at a higher temperature range (-40°C to +125°C).
  2. IDT71V416S15PHI: Offers a faster access time of 15 ns compared to the 10 ns of IDT71V416L10BEI8.
  3. IDT71V416S20PHI: Provides a larger density of 8 Megabits (8Mbit) compared to the 4 Megabits of IDT71V416L10BEI8.

These alternative models offer similar functionality with slight variations in specifications to cater to

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V416L10BEI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V416L10BEI8 in technical solutions:

  1. Q: What is IDT71V416L10BEI8? A: IDT71V416L10BEI8 is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V416L10BEI8? A: IDT71V416L10BEI8 has a capacity of 4 megabits (Mbit), which is equivalent to 512 kilobytes (KB).

  3. Q: What is the operating voltage range for IDT71V416L10BEI8? A: The operating voltage range for IDT71V416L10BEI8 is typically between 3.0 volts (V) and 3.6V.

  4. Q: What is the access time of IDT71V416L10BEI8? A: The access time of IDT71V416L10BEI8 is 10 nanoseconds (ns), hence the "10" in its part number.

  5. Q: Is IDT71V416L10BEI8 compatible with both commercial and industrial temperature ranges? A: Yes, IDT71V416L10BEI8 is designed to operate within the commercial temperature range of 0°C to 70°C as well as the industrial temperature range of -40°C to 85°C.

  6. Q: Does IDT71V416L10BEI8 support burst mode operation? A: No, IDT71V416L10BEI8 does not support burst mode operation. It is a synchronous SRAM chip with asynchronous read and write operations.

  7. Q: What is the pin configuration of IDT71V416L10BEI8? A: IDT71V416L10BEI8 has a 44-pin TSOP (Thin Small Outline Package) configuration.

  8. Q: Can IDT71V416L10BEI8 be used in battery-powered devices? A: Yes, IDT71V416L10BEI8 can be used in battery-powered devices as it operates within a low voltage range and has low power consumption.

  9. Q: Does IDT71V416L10BEI8 have any built-in error correction capabilities? A: No, IDT71V416L10BEI8 does not have built-in error correction capabilities. It is a standard SRAM chip without error correction features.

  10. Q: What are some typical applications for IDT71V416L10BEI8? A: IDT71V416L10BEI8 is commonly used in various technical solutions such as networking equipment, telecommunications systems, industrial automation, and embedded systems where fast and reliable data storage is required.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.