IDT71V3579YS65PFG

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V3579YS65PFG is a high-speed synchronous static random access memory (SRAM) designed for use in various electronic devices and systems. It provides fast and reliable data storage and retrieval capabilities.

Characteristics: - High-speed operation - Synchronous interface - Low power consumption - Large storage capacity - Reliable performance

Package: The IDT71V3579YS65PFG is available in a compact and durable package, which ensures easy integration into electronic circuits and systems.

Essence: This IC serves as a crucial component in electronic devices, enabling efficient data storage and retrieval operations.

Packaging/Quantity: The IDT71V3579YS65PFG is typically packaged in trays or reels, with each package containing a specific quantity of ICs.

Specifications

• Memory Type: Synchronous SRAM
• Organization: 32M x 16 bits
• Operating Voltage: 3.3V
• Access Time: 6.5 ns
• Clock Frequency: Up to 133 MHz
• Power Consumption: Low power operation
• Temperature Range: -40°C to +85°C
• Package Type: 119-ball BGA

Pin Configuration

The IDT71V3579YS65PFG features a 119-ball BGA package with the following pin configuration:

Functional Features

1. High-Speed Operation: The IDT71V3579YS65PFG offers fast access times, allowing for quick data read and write operations.
2. Synchronous Interface: The IC synchronizes its operations with an external clock signal, ensuring reliable and accurate data transfer.
3. Low Power Consumption: The IDT71V3579YS65PFG is designed to minimize power consumption, making it suitable for battery-powered devices.
4. Large Storage Capacity: With a capacity of 32M x 16 bits, this IC provides ample storage space for data-intensive applications.
5. Reliable Performance: The IDT71V3579YS65PFG delivers consistent and dependable performance, meeting the requirements of various electronic systems.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Synchronous interface ensures reliable data transfer. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data requirements. - Reliable performance guarantees consistent operation.

Disadvantages: - Limited compatibility with certain older systems due to specific voltage and package requirements. - Relatively higher cost compared to other memory technologies.

Working Principles

The IDT71V3579YS65PFG operates based on synchronous SRAM technology. It utilizes a clock signal to synchronize its internal operations with the external system. When a read or write command is issued, the IC accesses the requested data from its memory cells and transfers it to or from the external system.

Detailed Application Field Plans

The IDT71V3579YS65PFG finds application in various electronic devices and systems, including but not limited to: 1. Computer systems 2. Networking equipment 3. Telecommunications devices 4. Industrial control systems 5. Automotive electronics 6. Consumer electronics

Alternative Models

1. Micron MT48LC32M16A2P-75IT: Similar specifications and functionality, compatible with the IDT71V3579YS65PFG.
2. Samsung K6R4016V1D-UI10: Offers comparable features and performance, suitable as an alternative to the IDT71V3579YS65PFG.
3. Cypress CY7C1041DV33-10ZSXI: Provides similar characteristics and functionality, serving as a viable alternative to the IDT71V3579YS65PFG.

These alternative models can be considered based on specific project requirements and availability.

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