IDT71V3579S65PF

Product Overview

Category

The IDT71V3579S65PF belongs to the category of semiconductor memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance

Package

The IDT71V3579S65PF is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage capabilities for electronic systems.

Packaging/Quantity

The IDT71V3579S65PF is typically packaged in trays or reels, with quantities varying based on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 32 Megabits x 16 bits
• Operating Voltage: 3.3V
• Access Time: 65 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-pin Plastic Fine-Pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The IDT71V3579S65PF has a total of 48 pins, each serving a specific function within the device. The pin configuration is as follows:

1. VDDQ
2. DQ15
3. DQ14
4. DQ13
5. DQ12
6. DQ11
7. DQ10
8. DQ9
9. DQ8
10. DQ7
11. DQ6
12. DQ5
13. DQ4
14. DQ3
15. DQ2
16. DQ1
17. DQ0
18. GND
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. CE2#
37. CE1#
38. WE#
39. OE#
40. UB#
41. LB#
42. CLK
43. CLKEN#
44. ZZ#
45. ZZ#
46. ZZ#
47. ZZ#
48. GND

Functional Features

• High-speed access and data transfer
• Non-volatile storage capability
• Low power consumption during standby mode
• Easy integration into existing electronic systems
• Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

• Fast access time allows for efficient data retrieval
• Large storage capacity meets the demands of modern applications
• Low power consumption helps conserve energy
• Reliable performance ensures data integrity

Disadvantages

• Higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity
• Sensitivity to environmental factors such as temperature and voltage fluctuations

Working Principles

The IDT71V3579S65PF operates based on the principles of static random access memory (SRAM). It utilizes a combination of flip-flops and logic gates to store and retrieve digital information. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

The IDT71V3579S65PF finds application in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V3579S85PF: Similar to the IDT71V3579S65PF, but with a faster access time of 85 nanoseconds.
2. IDT71V3579S45PF: Similar to the IDT71V3579S65PF, but with a slower access time of 45 nanoseconds.
3. IDT71V3579S55PF: Similar to the IDT71V3579S65PF, but with an intermediate access time of 55 nanoseconds.

These alternative models offer different performance characteristics to cater to specific application requirements.

In conclusion, the IDT71V3579S65PF is a high-performance semiconductor memory device that provides efficient and reliable data storage capabilities for various electronic systems. Its fast access time, large storage capacity, and low power consumption make it suitable for a wide range of applications. However, it is important to consider the cost and scalability limitations associated with this technology.