IDT71V3578YS133PF

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
• Essence: Non-volatile Static Random Access Memory (nvSRAM)
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements.

Specifications

• Memory Type: Asynchronous nvSRAM
• Density: 256Kb (32K x 8)
• Access Time: 10ns
• Operating Voltage: 3.0V to 3.6V
• Standby Current: 20μA (typical)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years (minimum)

Detailed Pin Configuration

The IDT71V3578YS133PF has a total of 48 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. A16
28. A17
29. A18
30. A19
31. A20
32. A21
33. A22
34. A23
35. A24
36. A25
37. A26
38. A27
39. A28
40. A29
41. A30
42. A31
43. CE#
44. OE#
45. WE#
46. RESET#
47. VCC
48. GND

Functional Features

• Non-volatile memory: Retains data even when power is lost.
• High-speed performance: Access time of 10ns allows for quick data retrieval.
• Low power consumption: Standby current of only 20μA helps conserve energy.
• Large storage capacity: 256Kb provides ample space for data storage.

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data integrity during power interruptions. - Fast access time enables efficient data retrieval. - Low power consumption contributes to energy efficiency. - Ample storage capacity meets various application requirements.

Disadvantages: - Relatively higher cost compared to traditional volatile memory. - Limited availability in certain package options.

Working Principles

The IDT71V3578YS133PF utilizes non-volatile static random access memory (nvSRAM) technology. It combines the speed and ease of use of SRAM with the non-volatility of Flash memory. The device employs a backup power source, such as a small capacitor or battery, to retain data during power loss. This ensures that critical information remains intact even in the event of unexpected power interruptions.

Detailed Application Field Plans

The IDT71V3578YS133PF is suitable for a wide range of applications, including but not limited to:

1. Industrial control systems
2. Automotive electronics
3. Medical equipment
4. Communication infrastructure
5. Aerospace and defense systems

Detailed and Complete Alternative Models

1. IDT71V3578YS133BF: Similar to IDT71V3578YS133PF, but available in a different package.
2. IDT71V3578YS133CF: Higher density variant with 512Kb capacity.
3. IDT71V3578YS133DF: Lower power consumption version with reduced standby current.

These alternative models offer similar functionality and can be considered based on specific application requirements.

Word count: 346 words