IDT71V3577SA85BQI8

Product Overview

Use

This IC is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

High-speed performance
Low power consumption
Large storage capacity
Reliable data retention
Wide operating temperature range

Package

The IDT71V3577SA85BQI8 is available in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture, dust, and physical damage.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage and retrieval capabilities for electronic devices.

Packaging/Quantity

The IDT71V3577SA85BQI8 is typically packaged in trays or reels, with each package containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

Memory Type: Static Random Access Memory (SRAM)
Organization: 32M x 16
Operating Voltage: 3.3V
Access Time: 85ns
Interface: Parallel
Operating Temperature Range: -40°C to +85°C
Pin Count: 100

Detailed Pin Configuration

The IDT71V3577SA85BQI8 has a total of 100 pins, each serving a specific function. The detailed pin configuration is as follows:

VCC
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
WE#
OE#
CE#
UB#
LB#
VSS
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
GND

Functional Features

High-speed data access
Non-volatile storage
Low power consumption
Easy integration with other electronic components
Reliable data retention even in harsh operating conditions

Advantages and Disadvantages

Advantages

Fast data access and retrieval
Low power consumption
Large storage capacity
Reliable performance
Wide operating temperature range

Disadvantages

Relatively higher cost compared to other memory technologies
Limited scalability for higher storage capacities

Working Principles

The IDT71V3577SA85BQI8 operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC uses a parallel interface to transfer data between the memory and the connected electronic device.

Detailed Application Field Plans

The IDT71V3577SA85BQI8 finds applications in various electronic devices that require high-speed and reliable memory storage. Some of the potential application fields include:

Computer systems
Networking equipment
Telecommunications devices 4

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V3577SA85BQI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V3577SA85BQI8 in technical solutions:

Question: What is the IDT71V3577SA85BQI8?
Answer: The IDT71V3577SA85BQI8 is a high-speed, low-power CMOS static RAM (SRAM) device with a capacity of 4 Megabits (512K x 8).
Question: What are the key features of the IDT71V3577SA85BQI8?
Answer: Some key features include a fast access time of 8ns, low power consumption, wide operating voltage range, and compatibility with various microcontrollers and processors.
Question: What are some typical applications for the IDT71V3577SA85BQI8?
Answer: This SRAM device is commonly used in networking equipment, telecommunications systems, industrial automation, medical devices, and other embedded systems that require high-speed data storage.
Question: How does the IDT71V3577SA85BQI8 handle power management?
Answer: The device has multiple power-saving modes, including standby and automatic power-down, which help reduce power consumption when the SRAM is not actively accessed.
Question: Can the IDT71V3577SA85BQI8 operate at different voltages?
Answer: Yes, it supports a wide operating voltage range from 3.0V to 3.6V, making it compatible with various system designs.
Question: Does the IDT71V3577SA85BQI8 have any built-in error detection or correction mechanisms?
Answer: No, this SRAM device does not have built-in error detection or correction features. However, external error detection and correction techniques can be implemented if required.
Question: What is the maximum operating frequency of the IDT71V3577SA85BQI8?
Answer: The device can operate at a maximum frequency of 125 MHz, allowing for high-speed data transfers.
Question: Can the IDT71V3577SA85BQI8 be used in both read and write operations simultaneously?
Answer: Yes, this SRAM device supports simultaneous read and write operations, enabling efficient data access in many applications.
Question: Is the IDT71V3577SA85BQI8 compatible with different package types?
Answer: Yes, it is available in various package options, including 44-pin TSOP (Thin Small Outline Package) and 48-ball TFBGA (Thin Fine-Pitch Ball Grid Array).
Question: Are there any specific design considerations when using the IDT71V3577SA85BQI8?
Answer: It is important to ensure proper decoupling capacitors, signal integrity, and noise control in the system design to optimize the performance of the SRAM device.