IDT71V35761YSA200BQI

Product Overview

Category

The IDT71V35761YSA200BQI belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Easy integration into electronic systems

Package

The IDT71V35761YSA200BQI is available in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture, dust, and physical damage.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently, making it an essential component in various electronic devices.

Packaging/Quantity

The IDT71V35761YSA200BQI is typically packaged in trays or reels, with each package containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: IDT71V35761YSA200BQI
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 4 Megabits (4Mb)
• Organization: 256K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Interface: Parallel
• Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The IDT71V35761YSA200BQI has a total of 48 pins, which are assigned specific functions. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. /WE
35. /OE
36. /CE2
37. /CE1
38. /CE0
39. /UBS
40. /LBS
41. /RAS
42. /CAS
43. /CS1
44. /CS2
45. NC
46. GND
47. GND
48. VCC

Functional Features

• High-speed data access and retrieval
• Low power consumption in standby mode
• Easy integration into existing electronic systems
• Reliable data retention even in harsh environmental conditions
• Compatibility with various microprocessors and controllers

Advantages and Disadvantages

Advantages

• Fast data access and retrieval speed
• Large storage capacity
• Low power consumption
• Compatibility with different electronic systems
• Reliable data retention

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity
• Susceptible to electromagnetic interference (EMI)

Working Principles

The IDT71V35761YSA200BQI operates based on the principles of static random access memory (SRAM). It stores digital information in a volatile manner, meaning that the data is lost when power is removed. The memory cells within the IC are organized in a matrix structure, allowing for fast and random access to any specific memory location.

Detailed Application Field Plans

The IDT71V35761YSA200BQI finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

1. IDT71V35761S200BQI: Similar to IDT71V35761YSA200BQI, but with a different temperature range (-40°C to +125°C).
2. IDT71V35761YSA166BQI: Similar to IDT71V35761YSA200BQI, but with a lower access time of 6 ns.
3. IDT71V35761YSA225BQI: Similar to IDT71V35761YSA200BQI, but with