IDT71V35761YSA200BQ

Product Overview

Category

The IDT71V35761YSA200BQ belongs to the category of integrated circuits (ICs).

Use

This IC is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable operation

Package

The IDT71V35761YSA200BQ is available in a compact and durable package, ensuring easy integration into various electronic systems.

Essence

This IC serves as a crucial component in electronic devices, enabling efficient data storage and retrieval operations.

Packaging/Quantity

The IDT71V35761YSA200BQ is typically packaged in trays or reels, with each package containing a specific quantity of ICs.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4M x 16
• Supply Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 48
• Data Retention: 10 years

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. WE#
20. CE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. I/O8
30. I/O9
31. I/O10
32. I/O11
33. I/O12
34. I/O13
35. I/O14
36. I/O15
37. GND
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed data access and retrieval
• Low power consumption during standby mode
• Easy integration into various electronic systems
• Reliable operation in extreme temperature conditions

Advantages

• Fast access time enhances overall system performance
• Large storage capacity accommodates extensive data requirements
• Low power consumption prolongs battery life in portable devices
• Reliable operation ensures data integrity and system stability

Disadvantages

• Limited compatibility with certain older systems due to specific voltage requirements
• Relatively higher cost compared to other memory technologies

Working Principles

The IDT71V35761YSA200BQ operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC utilizes a matrix of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V35761YSA200BQ finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Telecommunications devices - Consumer electronics - Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V35761S200BQ - Similar specifications, but with a different package type.
2. IDT71V35761YSA200B - Similar specifications, but without the "Q" suffix indicating package type.
3. IDT71V35761YSA200BG - Similar specifications, but with a different package type and lead-free construction.

These alternative models offer similar functionality and performance characteristics, providing flexibility in choosing the most suitable option for specific applications.

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