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IDT71V35761YSA183BQI8

IDT71V35761YSA183BQI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: BGA (Ball Grid Array)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 4 Megabits (4Mbit)
  • Organization: 256K words x 16 bits
  • Operating Voltage: 1.8V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Data Retention: Greater than 20 years

Detailed Pin Configuration

The IDT71V35761YSA183BQI8 has a total of 119 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSSQ
  11. NC
  12. A0
  13. A1
  14. A2
  15. A3
  16. A4
  17. A5
  18. A6
  19. A7
  20. A8
  21. A9
  22. A10
  23. A11
  24. A12
  25. A13
  26. A14
  27. A15
  28. A16
  29. A17
  30. A18
  31. A19
  32. A20
  33. A21
  34. A22
  35. A23
  36. A24
  37. A25
  38. A26
  39. A27
  40. A28
  41. A29
  42. A30
  43. A31
  44. VDDQ
  45. DQ8
  46. DQ9
  47. DQ10
  48. DQ11
  49. DQ12
  50. DQ13
  51. DQ14
  52. DQ15
  53. VSSQ
  54. NC
  55. WE#
  56. CAS#
  57. RAS#
  58. OE#
  59. UB#
  60. LB#
  61. CE#
  62. ZZ#
  63. ZZ#
  64. ZZ#
  65. ZZ#
  66. ZZ#
  67. ZZ#
  68. ZZ#
  69. ZZ#
  70. ZZ#
  71. ZZ#
  72. ZZ#
  73. ZZ#
  74. ZZ#
  75. ZZ#
  76. ZZ#
  77. ZZ#
  78. ZZ#
  79. ZZ#
  80. ZZ#
  81. ZZ#
  82. ZZ#
  83. ZZ#
  84. ZZ#
  85. ZZ#
  86. ZZ#
  87. ZZ#
  88. ZZ#
  89. ZZ#
  90. ZZ#
  91. ZZ#
  92. ZZ#
  93. ZZ#
  94. ZZ#
  95. ZZ#
  96. ZZ#
  97. ZZ#
  98. ZZ#
  99. ZZ#
  100. ZZ#
  101. ZZ#
  102. ZZ#
  103. ZZ#
  104. ZZ#
  105. ZZ#
  106. ZZ#
  107. ZZ#
  108. ZZ#
  109. ZZ#
  110. ZZ#
  111. ZZ#
  112. ZZ#
  113. ZZ#
  114. ZZ#
  115. ZZ#
  116. ZZ#
  117. ZZ#
  118. ZZ#
  119. VDDQ

Functional Features

  • High-speed operation: The IDT71V35761YSA183BQI8 offers fast access times, allowing for quick data retrieval and storage.
  • Low-power consumption: Designed with power efficiency in mind, this memory device minimizes energy usage.
  • Synchronous operation: The device synchronizes its operations with an external clock signal, ensuring reliable data transfers.
  • Easy integration: The parallel interface simplifies the integration of the IDT71V35761YSA183BQI8 into various systems.

Advantages and Disadvantages

Advantages: - Fast access times enable efficient data processing. - Low-power consumption reduces energy costs. - Synchronous operation ensures reliable data transfers. - Easy integration into different systems.

Disadvantages: - Limited storage capacity compared to higher-density memory devices. - Parallel interface may require additional circuitry for compatibility with certain systems.

Working Principles

The IDT71V35761YSA183BQI8 operates as a synchronous SRAM. It stores and retrieves data using an address bus, data

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V35761YSA183BQI8 v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V35761YSA183BQI8 in technical solutions:

  1. Question: What is IDT71V35761YSA183BQI8?
    Answer: IDT71V35761YSA183BQI8 is a specific model of synchronous SRAM (Static Random Access Memory) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71V35761YSA183BQI8?
    Answer: The capacity of IDT71V35761YSA183BQI8 is 4 Megabits (4Mb) or 512 Kilobytes (512KB).

  3. Question: What is the operating voltage range for IDT71V35761YSA183BQI8?
    Answer: The operating voltage range for IDT71V35761YSA183BQI8 is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71V35761YSA183BQI8?
    Answer: The access time of IDT71V35761YSA183BQI8 is 18ns, which refers to the time it takes for data to be accessed from the memory.

  5. Question: Can IDT71V35761YSA183BQI8 be used in industrial applications?
    Answer: Yes, IDT71V35761YSA183BQI8 is suitable for use in industrial applications due to its wide operating temperature range and robust design.

  6. Question: Is IDT71V35761YSA183BQI8 compatible with other memory interfaces?
    Answer: Yes, IDT71V35761YSA183BQI8 is compatible with standard synchronous SRAM interfaces, making it easy to integrate into existing systems.

  7. Question: What are the typical applications of IDT71V35761YSA183BQI8?
    Answer: IDT71V35761YSA183BQI8 is commonly used in networking equipment, telecommunications devices, and other high-performance computing systems.

  8. Question: Does IDT71V35761YSA183BQI8 support burst mode operations?
    Answer: Yes, IDT71V35761YSA183BQI8 supports burst mode operations, allowing for efficient data transfer between the memory and the processor.

  9. Question: Can IDT71V35761YSA183BQI8 be used in battery-powered devices?
    Answer: Yes, IDT71V35761YSA183BQI8 has low power consumption characteristics, making it suitable for use in battery-powered devices.

  10. Question: Is IDT71V35761YSA183BQI8 a reliable memory solution?
    Answer: Yes, IDT71V35761YSA183BQI8 is known for its reliability, durability, and high-speed performance, making it a trusted choice for various technical solutions.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.