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IDT71V35761YSA166BQ

IDT71V35761YSA166BQ

Product Overview

Category

The IDT71V35761YSA166BQ belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Reliable data retention
  • Easy integration into various electronic systems

Package

The IDT71V35761YSA166BQ is typically available in a small outline integrated circuit (SOIC) package.

Essence

This IC is designed to provide efficient and reliable memory functionality for electronic devices.

Packaging/Quantity

The IDT71V35761YSA166BQ is usually packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K words x 36 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Pin Count: 100 pins

Detailed Pin Configuration

The IDT71V35761YSA166BQ has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. A0
  35. A1
  36. A2
  37. A3
  38. A4
  39. A5
  40. A6
  41. A7
  42. A8
  43. A9
  44. A10
  45. A11
  46. A12
  47. A13
  48. A14
  49. A15
  50. A16
  51. A17
  52. A18
  53. A19
  54. A20
  55. A21
  56. A22
  57. A23
  58. A24
  59. A25
  60. A26
  61. A27
  62. A28
  63. A29
  64. A30
  65. A31
  66. A32
  67. A33
  68. A34
  69. A35
  70. A36
  71. A37
  72. A38
  73. A39
  74. A40
  75. A41
  76. A42
  77. A43
  78. A44
  79. A45
  80. A46
  81. A47
  82. A48
  83. A49
  84. A50
  85. A51
  86. A52
  87. A53
  88. A54
  89. A55
  90. A56
  91. A57
  92. A58
  93. A59
  94. A60
  95. A61
  96. A62
  97. A63
  98. /WE#
  99. /OE#
  100. VSSQ

Functional Features

  • High-speed data access and retrieval
  • Non-volatile storage capability
  • Low power consumption during standby mode
  • Easy integration with various microprocessors and controllers
  • Multiple chip enable options for flexible memory organization

Advantages and Disadvantages

Advantages

  • Fast data access and retrieval
  • Large storage capacity
  • Low power consumption
  • Reliable data retention
  • Compatibility with various electronic systems

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited scalability in terms of storage capacity

Working Principles

The IDT71V35761YSA166BQ is based on static random access memory (SRAM) technology. It stores data using a combination of flip-flops, which retain information as long as power is supplied. The memory cells are organized into a matrix structure, allowing for efficient read and write operations.

Detailed Application Field Plans

The IDT71V35761Y

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V35761YSA166BQ v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V35761YSA166BQ in technical solutions:

  1. Question: What is IDT71V35761YSA166BQ?
    Answer: IDT71V35761YSA166BQ is a specific model of synchronous SRAM (Static Random Access Memory) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71V35761YSA166BQ?
    Answer: The capacity of IDT71V35761YSA166BQ is 4 Megabits (4Mb) or 512 Kilobytes (512KB).

  3. Question: What is the operating voltage range for IDT71V35761YSA166BQ?
    Answer: The operating voltage range for IDT71V35761YSA166BQ is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71V35761YSA166BQ?
    Answer: The access time of IDT71V35761YSA166BQ is 10ns, which means it takes approximately 10 nanoseconds to read or write data.

  5. Question: Can IDT71V35761YSA166BQ be used in industrial applications?
    Answer: Yes, IDT71V35761YSA166BQ can be used in various industrial applications that require reliable and fast memory storage.

  6. Question: Is IDT71V35761YSA166BQ compatible with standard microcontrollers?
    Answer: Yes, IDT71V35761YSA166BQ is designed to be compatible with standard microcontrollers and can be easily integrated into existing systems.

  7. Question: Does IDT71V35761YSA166BQ support multiple read and write operations simultaneously?
    Answer: No, IDT71V35761YSA166BQ is a synchronous SRAM and does not support simultaneous read and write operations.

  8. Question: Can IDT71V35761YSA166BQ operate at high temperatures?
    Answer: Yes, IDT71V35761YSA166BQ is designed to operate reliably at high temperatures, making it suitable for automotive and aerospace applications.

  9. Question: What is the package type of IDT71V35761YSA166BQ?
    Answer: IDT71V35761YSA166BQ comes in a 44-pin TSOP (Thin Small Outline Package) form factor.

  10. Question: Are there any specific design considerations when using IDT71V35761YSA166BQ?
    Answer: It is important to ensure proper power supply decoupling and signal integrity when designing with IDT71V35761YSA166BQ to achieve optimal performance.

Please note that these answers are general and may vary depending on the specific requirements and use cases.