IDT, Integrated Device Technology Inc
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IDT71V35761SA200BQ
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IDT71V35761SA200BQ

Product Overview

Category

The IDT71V35761SA200BQ belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for data storage and retrieval purposes.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Reliable operation

Package

The IDT71V35761SA200BQ is available in a compact surface mount package, which ensures easy integration into various electronic systems.

Essence

This integrated circuit serves as a crucial component in electronic devices, enabling efficient data storage and retrieval operations.

Packaging/Quantity

The IDT71V35761SA200BQ is typically packaged in reels or trays, with each containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K x 36
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C
  • Speed: 200MHz
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP

Detailed Pin Configuration

The IDT71V35761SA200BQ features a 100-LQFP package with the following pin configuration:

  1. A0
  2. A1
  3. A2
  4. A3
  5. A4
  6. A5
  7. A6
  8. A7
  9. A8
  10. A9
  11. A10
  12. A11
  13. A12
  14. A13
  15. A14
  16. A15
  17. A16
  18. A17
  19. A18
  20. A19
  21. A20
  22. A21
  23. A22
  24. A23
  25. A24
  26. A25
  27. A26
  28. A27
  29. A28
  30. A29
  31. A30
  32. A31
  33. DQ0
  34. DQ1
  35. DQ2
  36. DQ3
  37. DQ4
  38. DQ5
  39. DQ6
  40. DQ7
  41. DQ8
  42. DQ9
  43. DQ10
  44. DQ11
  45. DQ12
  46. DQ13
  47. DQ14
  48. DQ15
  49. DQ16
  50. DQ17
  51. DQ18
  52. DQ19
  53. DQ20
  54. DQ21
  55. DQ22
  56. DQ23
  57. DQ24
  58. DQ25
  59. DQ26
  60. DQ27
  61. DQ28
  62. DQ29
  63. DQ30
  64. DQ31
  65. WE#
  66. CAS#
  67. RAS#
  68. OE#
  69. UB#
  70. LB#
  71. VCC
  72. GND
  73. CLK
  74. CKE
  75. CS#
  76. DM0
  77. DM1
  78. DM2
  79. DM3
  80. DM4
  81. DM5
  82. DM6
  83. DM7
  84. DM8
  85. DM9
  86. DM10
  87. DM11
  88. DM12
  89. DM13
  90. DM14
  91. DM15
  92. DM16
  93. DM17
  94. DM18
  95. DM19
  96. DM20
  97. DM21
  98. DM22
  99. DM23
  100. VCC

Functional Features

  • High-speed data storage and retrieval
  • Non-volatile memory
  • Low power consumption
  • Easy integration into electronic systems
  • Reliable operation in various temperature conditions

Advantages and Disadvantages

Advantages

  • Fast data access and retrieval
  • Large storage capacity
  • Low power consumption
  • Compact package size
  • Reliable performance

Disadvantages

  • Limited compatibility with certain systems
  • Higher cost compared to alternative memory solutions

Working Principles

The IDT71V35761SA200BQ operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The integrated circuit utilizes a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V35761SA200

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací IDT71V35761SA200BQ v technických řešeních

Sure! Here are 10 common questions and answers related to the application of IDT71V35761SA200BQ in technical solutions:

  1. Question: What is the IDT71V35761SA200BQ?
    Answer: The IDT71V35761SA200BQ is a high-speed, low-power CMOS static RAM (SRAM) device with a capacity of 4 megabits (4M x 16).

  2. Question: What are the key features of the IDT71V35761SA200BQ?
    Answer: Some key features include a fast access time of 10 ns, low power consumption, wide operating voltage range, and a synchronous interface.

  3. Question: What are some typical applications for the IDT71V35761SA200BQ?
    Answer: This SRAM device is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance computing applications.

  4. Question: How does the IDT71V35761SA200BQ achieve low power consumption?
    Answer: It incorporates advanced power-saving features such as automatic power-down and self-refresh modes when the device is not actively accessed.

  5. Question: Can the IDT71V35761SA200BQ operate at different voltage levels?
    Answer: Yes, it has a wide operating voltage range of 3.0V to 3.6V, making it compatible with various system designs.

  6. Question: Does the IDT71V35761SA200BQ support burst mode operation?
    Answer: Yes, it supports both burst read and burst write operations, allowing for efficient data transfer in high-bandwidth applications.

  7. Question: What is the maximum clock frequency supported by the IDT71V35761SA200BQ?
    Answer: The device can operate at a maximum clock frequency of 200 MHz, enabling fast data access and transfer.

  8. Question: Can the IDT71V35761SA200BQ be used in systems with multiple devices?
    Answer: Yes, it supports chip enable and output enable signals, allowing for easy integration into systems with multiple SRAM devices.

  9. Question: Does the IDT71V35761SA200BQ have any built-in error correction capabilities?
    Answer: No, this SRAM device does not have built-in error correction capabilities. However, external error correction techniques can be implemented if required.

  10. Question: What is the package type of the IDT71V35761SA200BQ?
    Answer: It is available in a 48-pin ball grid array (BGA) package, which provides a compact and reliable form factor for easy PCB integration.

Please note that these questions and answers are general and may vary depending on specific application requirements.