IDT71V35761S200PFI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (4M x 1)
• Organization: 4M words x 1 bit
• Operating Voltage: 2.5V ± 0.2V
• Access Time: 10 ns
• Clock Frequency: 200 MHz
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years

Pin Configuration

The IDT71V35761S200PFI8 has a total of 48 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. VDDQ
12. DQ8
13. DQ9
14. DQ10
15. DQ11
16. DQ12
17. DQ13
18. DQ14
19. DQ15
20. VSSQ
21. VDDQ
22. DQ16
23. DQ17
24. DQ18
25. DQ19
26. DQ20
27. DQ21
28. DQ22
29. DQ23
30. VSSQ
31. VDDQ
32. DQ24
33. DQ25
34. DQ26
35. DQ27
36. DQ28
37. DQ29
38. DQ30
39. DQ31
40. VSSQ
41. VDDQ
42. A0
43. A1
44. A2
45. A3
46. A4
47. A5
48. VSSQ

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and synchronized data transfers.
• Easy integration into existing circuit designs due to standard interface protocols.

Advantages and Disadvantages

Advantages: - Fast access time and high clock frequency enable efficient data processing. - Low power consumption prolongs battery life in portable devices. - Reliable and durable memory storage with long data retention period. - Easy integration into various electronic systems.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to alternative memory options. - Susceptible to data loss in case of power failure without proper backup mechanisms.

Working Principles

The IDT71V35761S200PFI8 operates based on the principles of synchronous SRAM. It uses a clock signal to synchronize data transfers between the memory device and the external system. When a read or write operation is initiated, the address lines (A0-A5) specify the memory location, and the data lines (DQ0-DQ31) transmit the data. The device operates at a specific voltage level and requires stable power supply and ground connections for proper functioning.

Detailed Application Field Plans

The IDT71V35761S200PFI8 is commonly used in various applications, including:

1. Computer Systems: Used as cache memory to improve data access speed.
2. Networking Equipment: Provides fast data buffering capabilities in routers and switches.
3. Telecommunications: Enables efficient data storage and retrieval in communication systems.
4. Industrial Control Systems: Used for storing critical data in automation and control systems.
5. Automotive Electronics: Provides reliable memory storage for vehicle control units.

Alternative Models

There are several alternative models available that offer similar functionality to the IDT71V35761S200PFI8. Some notable alternatives include:

1. Micron MT48LC4M32B2P-6A: 4 Megabit synchronous SRAM with a clock frequency of 166 MHz.
2. Cypress CY7C1041DV33-10ZSXI: 4 Megabit synchronous SRAM with a clock frequency of 100 MHz.
3. Samsung K6R4016V1D-TC10: 4 Megabit synchronous SRAM