IDT71V35761S200PFI

Product Overview

Category

The IDT71V35761S200PFI belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable operation

Package

The IDT71V35761S200PFI is available in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture and physical damage.

Essence

The essence of the IDT71V35761S200PFI lies in its ability to provide efficient and reliable memory storage and retrieval capabilities for electronic devices.

Packaging/Quantity

This product is typically packaged in trays or tubes, with each containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: IDT71V35761S200PFI
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 35761 kilobits (Kb)
• Operating Voltage: 3.3V
• Access Time: 200 nanoseconds (ns)
• Organization: 8192 words x 32 bits
• Package Type: Plastic Fine-Pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The IDT71V35761S200PFI has a total of 100 pins, which are assigned specific functions for proper integration into electronic devices. The detailed pin configuration is as follows:

1. VDDQ - Power Supply
2. VSSQ - Ground
3. A0-A12 - Address Inputs
4. DQ0-DQ31 - Data Input/Output
5. WE - Write Enable
6. OE - Output Enable
7. CE - Chip Enable
8. UB/LB - Upper Byte/Lower Byte Control
9. CLK - Clock Input
10. NC - No Connection

(Note: The above pin configuration is a simplified representation. Please refer to the product datasheet for the complete and accurate pinout information.)

Functional Features

• High-speed data access and retrieval
• Low power consumption during standby mode
• Easy integration into various electronic devices
• Reliable operation in different environmental conditions
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• Fast data access and retrieval speed
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond a certain storage capacity
• Susceptible to data loss in case of power failure

Working Principles

The IDT71V35761S200PFI operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when the power supply is disconnected. The memory cells within the IC are organized in a matrix-like structure, allowing for efficient read and write operations.

Detailed Application Field Plans

The IDT71V35761S200PFI finds applications in various electronic devices, including but not limited to:

1. Personal computers
2. Servers
3. Networking equipment
4. Telecommunications devices
5. Automotive electronics
6. Industrial control systems

In these applications, the IDT71V35761S200PFI provides reliable and high-speed memory storage capabilities, enabling efficient data processing and retrieval.

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-UI10
2. Micron MT48LC16M16A2P-75IT
3. Cypress CY7C1041DV33-10ZSXI
4. Renesas R1LV1616RSD-5SI

(Note: The above list is not exhaustive and serves as an example of alternative models available in the market. Please refer to the product datasheets for detailed specifications and compatibility information.)

In conclusion, the IDT71V35761S200PFI is a high-performance integrated circuit belonging to the category of memory storage devices. With its fast access time, large capacity, and low power consumption, it finds applications in various electronic devices across different industries. While it offers numerous advantages, such as reliable operation and compact packaging, it also has certain limitations, including higher cost and susceptibility to data loss. Nonetheless, the IDT71V35761S200PFI remains a popular choice for memory-intensive applications due to its efficient working principles and compatibility with standard interfaces.